Display device

ABSTRACT

A display device includes a first base on which a display area and a non-display area are defined; a first support member disposed on the first base and located in the non-display area; a light emitting element disposed on the first base and located in the display area; an encapsulation layer which disposed on the light emitting element; a second base disposed on the encapsulation layer; a color filter disposed between the second base and the encapsulation layer, where the color filter overlaps the light emitting element; a wavelength conversion pattern disposed on the color filter; and a sealing member disposed between the first base and the second base and located in the non-display area, where the sealing member is located between the display area and the first support member and overlaps the encapsulation layer.

This application claims priority to Korean Patent Application No.10-2020-0062879, filed on May 26, 2020, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND 1. Field

The disclosure relates to a display device.

2. Description of the Related Art

Recently, display devices are more widely used with the development ofmultimedia. Accordingly, various display devices such as liquid crystaldisplay devices (“LCD”s) and organic light emitting diode displaydevices (“OLED”s) are being developed.

Among such display devices, a self-light emitting display deviceincludes a self-light emitting element such as an organic light emittingdiode. The self-light emitting element may include two electrodes facingeach other and a light emitting layer interposed between the twoelectrodes. In a self-light emitting display device where the self-lightemitting element is an organic light emitting diode, electrons and holesprovided from the two electrodes may be recombined in the light emittinglayer to generate excitons. As the generated excitons change from anexcited state to a ground state, light may be emitted.

Since such self-light emitting display devices operate without using aseparate light source such as a backlight unit, such self-light emittingdisplay devices are low in power consumption, lightweight and thin, andmay have a wide viewing angle, high luminance and contrast, and fastresponse speed. Due to these desired characteristics, self-lightemitting display devices are drawing attention as next-generationdisplay devices.

SUMMARY

In a display device, a color conversion pattern or a wavelengthconversion pattern may be placed in each pixel on a light path extendingfrom a light source to a viewer to allow each pixel of the displaydevice to uniquely display one primary color.

Embodiments of the disclosure provide a display device having improveddisplay quality and reliability.

An embodiment of a display device includes a first base on which adisplay area and a non-display area are defined; a first support memberdisposed on the first base and located in the non-display area; a lightemitting element disposed on the first base and located in the displayarea; an encapsulation layer disposed on the light emitting element; asecond base disposed on the encapsulation layer; a color filter disposedb between the second base and the encapsulation layer, where the colorfilter overlaps the light emitting element; a wavelength conversionpattern disposed on the color filter; and a sealing member disposedbetween the first base and the second base and located in thenon-display area, where the sealing member is located between thedisplay area and the first support member and overlaps the encapsulationlayer.

An embodiment of a display device includes a first base on which adisplay area and a non-display area are defined; a first support memberdisposed on the first base and located in the non-display area; a lightemitting element disposed on the first base and located in the displayarea; a second base disposed on the light emitting element; a colorfilter disposed between the second base and the light emitting element,where the color filter overlaps the light emitting element; a wavelengthconversion pattern disposed on the color filter; and a sealing memberdisposed between the first base and the second base and located in thenon-display area, where the sealing member includes a first portionspaced apart from an edge of the first base and a second portion alignedwith the edge of the first base, where the first portion of the sealingmember extends in a same direction as the first support member, islocated between the first support member and the display area, and isspaced apart from the first support member.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other features of embodiments of the invention will becomeapparent and more readily appreciated by describing in further detailembodiments with reference to the accompanying drawings, in which:

FIG. 1 is a cross-sectional view illustrating the schematic stackedstructure of a display device according to an embodiment;

FIG. 2 is a plan view of the display device according to an embodiment;

FIG. 3 is an enlarged plan view of part Q1 of FIG. 2, showing a displaysubstrate included in the display device of FIG. 2;

FIG. 4 is an enlarged plan view of part Q1 of FIG. 2, showing a colorconversion substrate included in the display device of FIG. 2;

FIG. 5 is a plan view of a modification of FIG. 3;

FIG. 6 is a plan view of a modification of FIG. 4;

FIG. 7 is an enlarged view of part Q3 of FIG. 2;

FIG. 8 is an enlarged plan view of part Q5 of FIG. 2;

FIG. 9 is a cross-sectional view taken along line X1-X1′ of the displaydevice of FIGS. 3 and 4;

FIG. 10 is an enlarged cross-sectional view of part Q7 of FIG. 9;

FIG. 11 is a cross-sectional view of a modification of the structureillustrated in FIG. 10;

FIG. 12 is a cross-sectional view taken along line X3-X3′ of the displaydevice, of FIG. 7;

FIG. 13 is a cross-sectional view taken along line X5-X5′ of the displaydevice of FIG. 8;

FIG. 14 is an enlarged cross-sectional view of a second portion of afirst support member illustrated in FIG. 13;

FIG. 15 is a plan view illustrating the schematic arrangement of a thirdcolor filter and a color pattern in the color conversion substrate ofthe display device according to an embodiment;

FIG. 16 is a plan view illustrating the schematic arrangement of a lightblocking pattern in the color conversion substrate of the display deviceaccording to an embodiment;

FIG. 17 is a plan view illustrating the schematic arrangement of a firstcolor filter in the color conversion substrate of the display deviceaccording to an embodiment;

FIG. 18 is a plan view illustrating the schematic arrangement of asecond color filter in the color conversion substrate of the displaydevice according to an embodiment;

FIG. 19 is a plan view illustrating the schematic arrangement of a bankpattern, a first wavelength conversion pattern, a second wavelengthconversion pattern, and a light transmission pattern in the colorconversion substrate of the display device according to an embodiment;

FIG. 20 is a plan view of a display device according to an embodimentseparated from a mother substrate, more specifically, a plan view of adisplay device according to an embodiment on which side polishing hasnot been performed;

FIG. 21 is a cross-sectional view taken along line X31-X31′ of FIG. 20showing the display device on which side polishing has not be performed;

FIG. 22 is a cross-sectional view taken along line X51-X51′ of FIG. 20showing the display device on which side polishing has not be performed;

FIG. 23 is a plan view of a display device according to an embodiment;

FIG. 24 is a cross-sectional view taken along line X32-X32′ of thedisplay device of FIG. 23;

FIG. 25 is a cross-sectional view taken along line X52-X52′ of thedisplay device of FIG. 23;

FIG. 26 is a plan view of a display device separated from a mothersubstrate, on which side polishing has not been performed, according toan embodiment;

FIG. 27 is a plan view of a display device according to an embodiment;

FIG. 28 is a cross-sectional view taken along line X33-X33′ of thedisplay device of FIG. 27;

FIG. 29 is a cross-sectional view taken along line X53-X53′ of thedisplay device of FIG. 27;

FIG. 30 is a plan view of a display device separated from a mothersubstrate, on which side polishing has not been performed, according toan embodiment;

FIG. 31 is a plan view of a display device according to an embodiment;

FIG. 32 is a cross-sectional view taken along line X34-X34′ of thedisplay device of FIG. 31;

FIG. 33 is a cross-sectional view taken along line X54-X54′ of thedisplay device of FIG. 31;

FIG. 34 is a plan view of a display device according to an embodiment;

FIG. 35 is a cross-sectional view taken along line X35-X35′ of thedisplay device of FIG. 34;

FIG. 36 is a cross-sectional view taken along line X55-X55′ of thedisplay device of FIG. 34;

FIG. 37 is a plan view of a display device according to an embodiment;

FIG. 38 is a cross-sectional view taken along line X36-X36′ of thedisplay device of FIG. 37; and

FIG. 39 is a cross-sectional view taken along line X56-X56′ of thedisplay device of FIG. 37.

DETAILED DESCRIPTION

The invention will now be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments ofthe invention are shown. This invention may, however, be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fillyconvey the scope of the invention to those skilled in the art. The samereference numbers indicate the same components throughout thespecification. In the attached figures, the thickness of layers andregions is exaggerated for clarity.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. For example, “an element” has the same meaning as“at least one element,” unless the context clearly indicates otherwise.“At least one” is not to be construed as limiting “a” or “an.” “Or”means “and/or.” As used herein, the term “and/or” includes any and allcombinations of at least one selected from the associated listed items.It will be further understood that the terms “comprises” and/or“comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

It will also be understood that when a layer is referred to as being“on” another layer or substrate, it can be directly on the other layeror substrate, or intervening layers may also be present. In contrast,when an element is referred to as being “directly on” another element,there are no intervening elements present.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The term “lower,” cantherefore, encompasses both an orientation of “lower” and “upper,”depending on the particular orientation of the figure. Similarly, if thedevice in one of the figures is turned over, elements described as“below” or “beneath” other elements would then be oriented “above” theother elements. The terms “below” or “beneath” can, therefore, encompassboth an orientation of above and below.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” can mean within one or morestandard deviations, or within ±30%, 20%, 10% or 5% of the stated value.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one element, component, region, layer or section fromanother region, layer or section. Thus, a first element, component,region, layer or section discussed below could be termed a secondelement, component, region, layer or section without departing from theteachings of the inventive concept.

Embodiments are described herein with reference to plan andcross-section illustrations that are schematic illustrations ofidealized embodiments of the disclosure. As such, variations from theshapes of the illustrations as a result, for example, of manufacturingtechniques and/or tolerances, are to be expected. Thus, embodiments ofthe disclosure should not be construed as limited to the particularshapes of regions illustrated herein but are to include deviations inshapes that result, for example, from manufacturing. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the actual shape of a region of a device andare not intended to limit the scope of the disclosure.

Embodiments are described herein with reference to plan andcross-section illustrations that are schematic illustrations ofidealized embodiments of the disclosure. As such, variations from theshapes of the illustrations as a result, for example, of manufacturingtechniques and/or tolerances, are to be expected. Thus, embodiments ofthe disclosure should not be construed as limited to the particularshapes of regions illustrated herein but are to include deviations inshapes that result, for example, from manufacturing. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the actual shape of a region of a device andare not intended to limit the scope of the disclosure.

Hereinafter, embodiments of the disclosure will be described in detailwith reference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating the schematic stackedstructure of a display device 1 according to an embodiment.

Referring to FIG. 1, an embodiment of the display device 1 may beapplied to or included in various electronic devices including small andmedium-sized electronic devices such as tablet personal computers(“PC”s), smartphones, car navigation units, cameras, center informationdisplays (“CID”s) provided in cars, wristwatch-type electronic devices,personal digital assistants (“PDA”s), portable multimedia players(“PMP”s) and game machines and medium and large-sized electronic devicessuch as televisions, external billboards, monitors, PCs andnotebook/laptop computers. However, these are merely exemplary, and thedisplay device 1 may also be employed in other electronic deviceswithout departing from the teachings of the disclosure.

The display device 1 may include a display area DA which displays animage and a non-display area NDA which does not display an image. In anembodiment, the non-display area NDA may be located around the displayarea DA and may surround the display area DA. An image displayed in thedisplay area DA may be viewed by or output to a user in a thirddirection Z or a thickness direction of the display device 1.

In an embodiment, the display device 1 includes a display substrate 10and a color conversion substrate 30 facing the display substrate 10 andmay further include a sealing member 50 bonding the display substrate 10and the color conversion substrate 30 to each other and a filler 70filling a space between the display substrate 10 and the colorconversion substrate 30.

The display substrate 10 may include elements and circuits (e.g., pixelcircuits such as switching elements) for displaying an image, a pixeldefining layer defining a light emitting region and a non-light emittingregion in the display area DA, and a self-light emitting element. In anembodiment, the self-light emitting element may include at least oneselected from an organic light emitting diode, a quantum dot lightemitting diode, an inorganic-based micro light emitting diode (e.g., amicro LED), and an inorganic-based nano light emitting diode (e.g., anano LED). For ease of description, embodiment where the self-lightemitting element is an organic light emitting diode will hereinafter bedescribed in detail, but not being limited thereto.

The color conversion substrate 30 may be located on the displaysubstrate 10 and may face the display substrate 10. In an embodiment,the color conversion substrate 30 may include a color conversion patternthat converts the color of incident light. In an embodiment, the colorconversion substrate 30 may include at least any one selected from acolor filter and a wavelength conversion pattern as the color conversionpattern. In one embodiment, for example, the color conversion substrate30 may include both the color filter and the wavelength conversionpattern.

The sealing member 50 may be located between the display substrate 10and the color conversion substrate 30 in the non-display area NDA. Thesealing member 50 may be disposed in the non-display area NDA alongedges of the display substrate 10 and the color conversion substrate 30to surround the display area DA in a plan view in the third direction Z.The display substrate 10 and the color conversion substrate 30 may bebonded to each other by the sealing member 50.

In an embodiment, the sealing member 50 may include or be made of anorganic material. In one embodiment, for example, the sealing member 50may include or be made of, but not limited to, epoxy resin.

The filler 70 may be located in the space between the display substrate10 and the color conversion substrate 30 surrounded by the sealingmember 50. The filler 70 may fill the space between the displaysubstrate 10 and the color conversion substrate 30.

In an embodiment, the filler 70 may include or be made of a materialcapable of transmitting light. In an embodiment, the filler 70 mayinclude or be made of an organic material. In one embodiment, forexample, the filler 70 may include or be made of a silicon-based organicmaterial, an epoxy-based organic material, or a mixture of asilicon-based organic material and an epoxy-based organic material.

In an embodiment, the filler 70 may include or be made of a materialhaving an extinction coefficient of substantially zero. A refractiveindex and an extinction coefficient are correlated, and the extinctioncoefficient decreases as the refractive index decreases. In anembodiment, where the material of the filler 70 has the refractive indexof about 1.7 or less, the extinction coefficient may substantiallyconverge to zero. In an embodiment, the filler 70 may include or be madeof a material having a refractive index of about 1.7 or less.Accordingly, light provided by the self-light emitting element may beeffectively prevented or minimized from being transmitted and absorbedby the filler 70. In an embodiment, the filler 70 may include or be madeof an organic material having a refractive index in a range of about 1.4to about 1.6.

FIG. 2 is a plan view of the display device 1 according to anembodiment. FIG. 3 is an enlarged plan view of part Q1 of FIG. 2,showing the display substrate 10 included in the display device 1 ofFIG. 2. FIG. 4 is an enlarged plan view of part Q1 of FIG. 2, showingthe color conversion substrate 30 included in the display device 1 ofFIG. 2. FIG. 5 is a plan view of a modification of FIG. 3. FIG. 6 is aplan view of a modification of FIG. 4. FIG. 7 is an enlarged view ofpart Q3 of FIG. 2. FIG. 8 is an enlarged plan view of part Q5 of FIG. 2.

Referring to FIGS. 2 through 8 in addition to FIG. 1, in an embodiment,the display device 1 may be rectangular in a plan view in the thirddirection Z as illustrated in FIG. 2. The display device 1 may includetwo sides extending in a first direction X, that is, a first side L1 anda third side L3, and two sides extending in a second direction Yintersecting the first direction X, that is, a second side L2 and afourth side L4. Corners at which the sides of the display device 1 meetmay be right-angled, but the disclosure is not limited thereto. In anembodiment, lengths of the first side L1 and the third side L3 may bedifferent from lengths of the second side L2 and the fourth side 1A. Inone embodiment, for example, the first side L1 and the third side L3 maybe longer than the second side L2 and the fourth side L4. The planarshape of the display device 1 is not limited to those shown in thedrawings, and may be variously modified to be in another shape, e.g., acircular shape or other polygonal shapes.

In an embodiment, the display device 1 may further include flexiblecircuit boards FPC and driving chips IC.

In an embodiment, as illustrated in FIG. 3, a plurality of lightemitting regions and a non-light emitting region NLA may be defined inthe display substrate 10 in the display area DA.

In an embodiment, a first light emitting region LA1, a second lightemitting region LA2, and a third light emitting region LA3 may bedefined in the display area DA of the display substrate 10. Each of thefirst light emitting region LA1, the second light emitting region LA2,and the third light emitting region LA3 may be a region where lightgenerated by a light emitting element of the display substrate 10 isemitted out of the display substrate 10, and the non-light emittingregion NLA may be a region where light is not emitted out of the displaysubstrate 10. In an embodiment, the non-light emitting region NLA maysurround each of the first light emitting region LA1, the second lightemitting region LA2, and the third light emitting region LA3 in thedisplay area DA.

In an embodiment, light emitted from the first light emitting regionLA1, the second light emitting region LA2, and the third light emittingregion LA3 may be light of a third color. In an embodiment, the light ofthe third color may be blue light and may have a peak wavelength in arange of about 440 nanometers (nm) to about 480 nm. Here, the peakwavelength refers to a wavelength at which the intensity of light ismaximum.

In an embodiment, the first light emitting region LA1, the second lightemitting region LA2, and the third light emitting region LA3 may formone pixel group, and a plurality of pixel groups may be defined in thedisplay area DA.

In an embodiment, the first light emitting region LA1, the second lightemitting region LA2, and the third light emitting region LA3 may besequentially located or arranged along the first direction X asillustrated in FIG. 3. In an embodiment, the first light emitting regionLA1, the second light emitting region LA2, and the third light emittingregion LA3 forming one pixel group may be repeatedly arranged in thedisplay area DA along the first direction X and the second direction Yor in a matrix form.

However, the disclosure is not limited thereto, and the arrangement ofthe first light emitting region LA1, the second light emitting regionLA2, and the third light emitting region LA3 may be changed variously.In one alternative embodiment, for example, as illustrated in FIG. 5,the first light emitting region LA1 and the second light emitting regionLA2 may neighbor each other along the first direction X, and the thirdlight emitting region LA3 may be located on a side of the first lightemitting region LA1 and the second light emitting region LA2 along thesecond direction Y.

For convenience of description, an embodiment where the first lightemitting region LA1, the second light emitting region LA2, and the thirdlight emitting region LA3 are arranged as illustrated in FIG. 3 willhereinafter be described in detail.

In such an embodiment, as illustrated in FIG. 4, a plurality of lighttransmitting regions and a light blocking region BA may be defined inthe color conversion substrate 30 in the display area DA. Each of thelight transmitting regions may be a region where light emitted from thedisplay substrate 10 is transmitted through the color conversionsubstrate 30 and provided to the outside of the display device 1. Thelight blocking region BA may be a region through which light emittedfrom the display substrate 10 is not transmitted.

In an embodiment, a first light transmitting region TA1, a second lighttransmitting region TA2 and a third light transmitting region TA3 may bedefined in the color conversion substrate 30.

In an embodiment, the first light transmitting region TA1 may correspondto the first light emitting region LA1 or may overlap the first lightemitting region LA1. In such an embodiment, the second lighttransmitting region TA2 may correspond to or overlap the second lightemitting region LA2, and the third light transmitting region TA3 maycorrespond to or overlap the third light emitting region LA3.

In an embodiment, where the first light emitting region LA1, the secondlight emitting region LA2, and the third light emitting region LA3 aresequentially located along the first direction X as illustrated in FIG.3, the first light transmitting region TA1, the second lighttransmitting region TA2, and the third light transmitting region TA3 maybe sequentially located along the first direction X as illustrated inFIG. 4.

In an alternative embodiment, where the first light emitting region LA1and the second light emitting region LA2 neighbor each other along thefirst direction X, and the third light emitting region LA3 is located ona side of the first light emitting region LA1 and the second lightemitting region LA2 along the second direction Y as illustrated in FIG.5, the first light transmitting region TA1 and the second light emittingregion TA2 may neighbor each other along the first direction X, and thethird light transmitting region TA3 may be located on a side of thefirst light transmitting region TA1 and the second light transmittingregion TA2 along the second direction Y as illustrated in FIG. 6.

In an embodiment, light of the third color provided by the displaysubstrate 10 may be emitted out of the display device 1 through thefirst light transmitting region TA1, the second light transmittingregion TA2, and the third light transmitting region TA3. When lightemitted out of the display device 1 in the first light transmittingregion TA1 is referred to as first output light, light emitted out ofthe display device 1 in the second light transmitting region TA2 isreferred to as second output light, and light emitted out of the displaydevice 1 in the third light transmitting region TA3 is referred to asthird output light, the first output light may be light of a firstcolor, the second output light may be light of a second color differentfrom the first color, and the third output light may be light of thethird color. In an embodiment, the light of the third color may be bluelight having a peak wavelength in a range of about 440 nm to about 480nm as described above, and the light of the first color may be red lighthaving a peak wavelength in a range of about 610 nm to about 650 nm. Insuch an embodiment, the light of the second color may be green lighthaving a peak wavelength in a range of about 510 nm to about 550 nm.

The light blocking region BA may be located around the first lighttransmitting region TA1, the second light transmitting region TA2, andthe third light transmitting region TA3 of the color conversionsubstrate 30 in the display area DA. In an embodiment, the lightblocking region BA may surround the first light transmitting region TA1,the second light transmitting region TA2, and the third lighttransmitting region TA3. In such an embodiment, the light blockingregion BA may be located in the non-display area NDA of the displaydevice 1.

Referring again to FIG. 2, a dam member DM, the sealing member 50, and afirst support member OS1 may be disposed in the non-display area NDA ofthe display device 1.

The dam member DM may block an organic material (or monomer) fromoverflowing in a process of forming an encapsulation layer disposed inthe display area DA. Accordingly, the organic material of theencapsulation layer may be prevented from extending toward edges of thedisplay device 1.

In an embodiment, the dam member DM may completely surround the displayarea DA in a plan view in the third direction Z.

The sealing member 50 may bond the display substrate 10 and the colorconversion substrate 30 together as described above.

The sealing member 50 may be located outside of the dam member DM in thenon-display area NDA and may completely surround the dam member DM andthe display area DA in a plan view in the third direction Z.

The first support member OS1 may support masks used in a process offorming elements of the display substrate 10, for example, a lightemitting layer, a cathode, a first capping layer, and inorganic layersof the encapsulation layer included in the display substrate 10.

The first support member OS1 may be located outside of the sealingmember 50 in the non-display area NDA. In such an embodiment, the firstsupport member OS1 may be located opposite the dam member DM with thesealing member 50 interposed between them. In an embodiment, the firstsupport member OS1 may surround the sealing member 50 in a plan view inthe third direction Z.

In an embodiment, the first support member OS1 may include a firstportion OS1 a adjacent to the first side L1 of the display device 1 anda second portion OS1 b disposed along the second side L2, the third sideL3 and the fourth side L4 of the display device 1.

In an embodiment, the first portion OS1 a and the second portion OS1 bmay be connected to each other, or the first portion OS1 a is extendedfrom the second portion OS1 b.

The first portion OS1 a may extend along the first direction X and maybe spaced apart from the first side L1 of the display device 1 along thesecond direction Y. The first portion OS1 a may be located betweenconnection pads PD to be described later and the sealing member 50.

The second portion OS1 b may be disposed along the second side L2, thethird side L3 and the fourth side L4 and may be located relativelycloser to the edges of the display device 1 or the sides of the displaydevice 1 than the first portion OS1 a. In such an embodiment, a distancebetween an edge of the display device 1 and the first portion OS1 a maybe greater than a distance between an edge of the display device 1 andthe second portion OS1 b.

In an embodiment, the second portion OS1 b may be aligned with thesecond side L2, the third side L3, and the fourth side L4 of the displaydevice 1.

In an embodiment, a width of the first portion OS1 a of the firstsupport member OS1 and a width of the second portion OS1 b of the firstsupport member OS1 may be different from each other.

In one embodiment, for example, as illustrated in FIGS. 7 and 8, a widthW1 a of the first portion OS1 a may be greater than a width W1 b of thesecond portion OS1 b. In such an embodiment, a part of the first supportmember OS1 which is located between the connection pads PD and thedisplay area DA may be wider than a part of the first support member OS1which is not located between the connection pads PD and the display areaDA.

The non-display area NDA of the display device 1 may include a pad areaPDA, and a plurality of connection pads PD may be located in the padarea PDA.

In an embodiment, the connection pads PD may be located in a partadjacent to a long side of the non-display area NDA, for example,located in a region adjacent to the first side L1 of the non-displayarea NDA. The connection pads PD may be electrically connected to pixelcircuits located in the display area DA by connection wirings or thelike.

In an embodiment, the connection pads PD may be located outside of thefirst support member OS1. In such an embodiment, the connection pads PDmay be located relatively farther away from the display area DA than thefirst support member OS1. In an embodiment, the connection pads PD maybe located between the first portion OS1 a of the first support memberOS1 and the first side L1 of the display device 1.

The display substrate 10 (see FIG. 1) of the display device 1 mayinclude the dam member DM, the first support member OS1, and theconnection pads PD described above.

The flexible circuit boards FPC may be connected to the connection padsPD. The flexible circuit boards FPC may electrically connect a circuitboard which provides signals, power, etc. for driving the display device1 to the display substrate 10 (see FIG. 1).

The driving chips IC may be electrically connected to the circuit boardto receive data and signals. In an embodiment, the driving chips IC maybe data driving chips and may receive a data control signal and imagedata from the circuit board and generate and output data voltagescorresponding to the image data.

In an embodiment, the driving chips IC may be mounted on the flexiblecircuit boards FPC. In one embodiment, for example, the driving chips ICmay be mounted on the flexible circuit boards FPC in the form of chipson film (“COF”).

The data voltages provided by the driving chips IC and the powerprovided by the circuit board may be transferred to the pixel circuitsof the display substrate 10 (see FIG. 1) via the flexible circuit boardsFPC and the connection pads PD.

The structure of the display device 1 will now be described in greaterdetail

FIG. 9 is a cross-sectional view taken along line X1-X1′ of the displaydevice 1 of FIGS. 3 and 4. FIG. 10 is an enlarged cross-sectional viewof part Q7 of FIG. 9. FIG. 11 is a cross-sectional view of amodification of the structure illustrated in FIG. 10. FIG. 12 is across-sectional view taken along line X3-X3′ of the display device 1 ofFIG. 7. FIG. 13 is a cross-sectional view taken along line X5-X5′ of thedisplay device 1 of FIG. 8. FIG. 14 is an enlarged cross-sectional viewof the second portion OS1 b of the first support member OS1 illustratedin FIG. 13.

Referring to FIGS. 9 through 14 in addition to FIGS. 1 through 8, anembodiment of the display device 1 may include the display substrate 10and the color conversion substrate 30 as described above and may furtherinclude the filler 70 located between the display substrate 10 and thecolor conversion substrate 30.

The display substrate 10 will now be described.

In an embodiment, a first base 110 in the display substrate 10 mayinclude or be made of a light transmitting material. In an embodiment,the first base 110 may be a glass substrate or a plastic substrate. Inan embodiment, where the first base 110 is a plastic substrate, thefirst base 110 may have flexibility.

In an embodiment, the light emitting regions LA1 through LA3 and thenon-light emitting region NLA may be defined in the first base 110 ofthe display area DA as described above.

In an embodiment, the first side L1, the second side L2, the third sideL3 and the fourth side L4 of the display device 1 may be defined by orthe same as four sides of the first base 110. In such an embodiment, thefirst side L1, the second side L2, the third side L3 and the fourth sideL4 of the display device 1 may also be referred to as a first side L1, asecond side L2, a third side L3 and a fourth side L4 of the first base110.

A buffer layer 111 may be further located on the first base 110 in thedisplay substrate 10. The buffer layer 111 may be located on the firstbase 110 and disposed in the display area DA and the non-display areaNDA. The buffer layer 111 may block foreign substances or moistureintroduced through the first base 110. In one embodiment, for example,the buffer layer 111 may include an inorganic material such as SiO₂,SiNx or SiON and may have a single layer or multilayer structure.

A light blocking pattern BML may be located on the buffer layer 111 inthe display substrate 10. The light blocking pattern BML may blockexternal light or light of a light emitting element from entering asemiconductor layer ACT to be described later, thereby preventing andreducing generation of leakage current due to light in a thin-filmtransistor TL to be described later.

In an embodiment, the light blocking pattern BML may include or be madeof a material blocking light and having conductivity. In one embodiment,for example, the light blocking pattern BML may include at least onemetal selected from silver (Ag), nickel (Ni), gold (Au), platinum (Pt),aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti) and neodymium(Nd), or an alloy thereof. In an embodiment, the light blocking patternBML may have a single layer structure or a multilayer structure. In oneembodiment, for example, where the light blocking pattern BML has amultilayer structure, the light blocking pattern BML may be, but is notlimited to, a stacked structure of titanium (Ti)/copper (Cu)/indium tinoxide (“ITO”) or a stacked structure of titanium (Ti)/copper(Cu)/aluminum oxide (Al₂O₃).

In an embodiment, the light blocking pattern BML may be provided inplural to correspond to each semiconductor layer ACT and overlap thesemiconductor layer ACT. In an embodiment, a width of the light blockingpattern BML may be greater than a width of the semiconductor layer ACT.

In an embodiment, the light blocking pattern BML may be a part of awiring that electrically connects a data line, a power supply line, athin-film transistor not illustrated in the drawings, and a thin-filmtransistor TL illustrated in the drawings to each other. In anembodiment, the light blocking pattern BML may include or be made of amaterial having smaller resistance than a second conductive layer or asource electrode SE and a drain electrode DE included in the secondconductive layer.

A first insulating layer 113 may be located on the light blockingpattern BML in the display substrate 10. In an embodiment, the firstinsulating layer 113 may be located in the display area DA and thenon-display area NDA. The first insulating layer 113 may cover the lightblocking pattern BML. In an embodiment, the first insulating layer 113may include an inorganic material such as SiO₂, SiNx, SiON, Al₂O₃, TiO₂,Ta₂O, HfO₂, or ZrO₂.

The semiconductor layer ACT may be located on the first insulating layer113 in the display substrate 10. In an embodiment, the semiconductorlayer ACT may be disposed to correspond to each of the first lightemitting region LA1, the second light emitting region LA2, and the thirdlight emitting region LA3 of the display area DA.

In an embodiment, the semiconductor layer ACT may include an oxidesemiconductor. In one embodiment, for example, the semiconductor layerACT may include or be made of a Zn oxide-based material such as Znoxide, In—Zn oxide or Ga—In—Zn oxide and may be an In—Ga—Zn—O (IGZO)semiconductor having metals such as indium (In) and gallium (Ga)contained in ZnO. However, the disclosure is not limited thereto, andthe semiconductor layer ACT may also include amorphous silicon orpolysilicon.

In an embodiment, the semiconductor layer ACT may be disposed to overlapeach light blocking pattern BML. Thus, the generation of photocurrent inthe semiconductor layer ACT may be suppressed.

A first conductive layer may be located on the semiconductor layer ACTin the display substrate 10 and may include a gate electrode GE, a firstgate metal WR1, and a second gate metal WR2. The gate electrode GE maybe located in the display area DA and may overlap the semiconductorlayer ACT. In an embodiment, as illustrated in FIG. 12, the first gatemetal WR1 may include a part of a wiring that electrically connects aconnection pad PD (see FIG. 2) to elements located in the display areaDA (see FIG. 2), for example, a thin-film transistor TL and a lightemitting element.

In an embodiment, as illustrated in FIG. 13, the second gate metal WR2may be located in the non-display area NDA. In an embodiment, the secondgate metal WR2 may include a part of a conductor constituting a gatedriving circuit. In such an embodiment, the second gate metal WR2 mayinclude at least a part of a guard ring that prevents inflow of staticelectricity from the outside.

The gate electrode GE, the first gate metal WR1, and the second gatemetal WR2 may include at least one selected from aluminum (Al), platinum(Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel(Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium(Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) inconsideration of adhesion to an adjacent layer, surface flatness of alayer to be stacked, and processability. Each of the gate electrode GE,the first gate metal WR1, and the second gate metal WR2 may be formed asa single layer or a multilayer.

A gate insulating layer 115 may be located between the semiconductorlayer ACT and the first conductive layer or between the semiconductorlayer ACT and the gate electrode GE in the display area DA. In anembodiment, the gate electrode GE and the gate insulating layer 115 mayfunction as a mask that masks a channel region of the semiconductorlayer ACT, and a width of each of the gate electrode GE and the gateinsulating layer 115 may be smaller than the width of the semiconductorlayer ACT.

In an embodiment, the gate insulating layer 115 may not be disposed overthe entire surface of the first base 110 but may be partially patterned.In an embodiment, the width of the patterned gate insulating layer 115may be greater than the width of the gate electrode GE or the firstconductive layer.

In an embodiment, the gate insulating layer 115 may include an inorganicmaterial. In one embodiment, for example, the gate insulating layer 115may include at least one inorganic material listed above in thedescription of the first insulating layer 113.

The gate insulating layer 115 may be located between the first gatemetal WR1 and the first insulating layer 113 and between the second gatemetal WR2 and the first insulating layer 113 in the non-display areaNDA.

A second insulating layer 117 may be located on the gate insulatinglayer 115 in the display substrate 10 to cover the semiconductor layerACT and the gate electrode GE. The second insulating layer 117 may belocated in the display area DA and the non-display area NDA. In anembodiment, the second insulating layer 117 may function as aplanarization layer that provides a flat surface.

In an embodiment, the second insulating layer 117 may include an organicmaterial. In one embodiment, for example, the second insulating layer117 may include, but is not limited to, at least one selected from photoacryl (“PAC”), polystylene, polymethyl methacrylate (“PMMA”),polyacrylonitrile (“PAN”), polyamide, polyimide, polyarylether,heterocyclic polymer, parylene, fluorine-based polymer, epoxy resin,benzocyclobutene series resin, siloxane series resin, and silane resin.

The second conductive layer may be located on the second insulatinglayer 117 in the display substrate 10. The second conductive layer mayinclude the source electrode SE, the drain electrode DE, a power supplywiring VSL, and a first pad electrode PD1 of the connection pad PD.

The source electrode SE and the drain electrode DE may be located in thedisplay area DA and spaced apart from each other.

Each of the drain electrode DE and the source electrode SE may penetrateor be disposed through the second insulating layer 117 and may beconnected to the active layer ACT.

In an embodiment, the source electrode SE may penetrate the firstinsulating layer 113 and the second insulating layer 117 and may beconnected to the light blocking pattern BML. In an embodiment where thelight blocking pattern BML is a part of a wiring that transmits a signalor a voltage, the source electrode SE may be connected and electricallycoupled to the light blocking pattern BML to receive a voltage or thelike provided to the wiring. In an alternative embodiment, where thelight blocking pattern BML is a floating pattern rather than a separatepattern, a voltage or the like provided to the source electrode SE maybe transferred to the light blocking pattern BML.

Alternatively, the drain electrode DE may penetrate or be disposedthrough the first insulating layer 113 and the second insulating layer117 and may be connected to the light blocking pattern BML. In anembodiment where the light blocking pattern BML is not a wiring to whicha separate signal is provided, a voltage or the like applied to thedrain electrode DE may be transferred to the light blocking pattern BML.

The semiconductor layer ACT, the gate electrode GE, the source electrodeSE, and the drain electrode DE described above may constitute athin-film transistor TL. In an embodiment, the thin-film transistor TLmay be located in each of the first light emitting region LA1, the lightemitting region LA2, and the third light emitting region LA3. In anembodiment, a part of the thin-film transistor TL may be located in thenon-light emitting region NLA.

The power supply wiring VSL may be located in the non-display area NDA.A driving voltage provided to a cathode CE, for example, an ELVS Svoltage, may be provided to the power supply wiring VSL.

The first pad electrode PD1 of the connection pad PD may be located inthe pad area PDA (see FIG. 2) of the non-display area NDA. In anembodiment, the first pad electrode PD1 may penetrate the secondinsulating layer 117 and may be electrically connected to a first wiringlayer WR.

Each of the source electrode SE, the drain electrode DE, the powersupply wiring VSL, and the first pad electrode PD1 of the connection padPD may include aluminum (Al), copper (Cu) or titanium (Ti) and may beformed as a multilayer or a single layer. In an embodiment, each of thesource electrode SE, the drain electrode DE, the power supply wiringVSL, and the first pad electrode PD1 of the connection pad PD may have amultilayer structure of Ti/Al/Ti.

A third insulating layer 130 may be located on the second insulatinglayer 117 in the display substrate 10. The third insulating layer 130may cover the thin-film transistors TL in the display area DA and exposea part of the power supply wiring VSL in the non-display area NDA.

In an embodiment, the third insulating layer 130 may be a planarizationlayer. In an embodiment, the third insulating layer 130 may include orbe made of an organic material. In one embodiment, for example, thethird insulating layer 130 may include acrylic resin, epoxy resin, imideresin, or ester resin. In an embodiment, the third insulating layer 130may include a photosensitive organic material.

In an embodiment, a first anode AE1, a second anode AE2 and a thirdanode AE3 may be located on the third insulating layer 130 in thedisplay area DA. In such an embodiment, in the non-display area NDA, aconnection electrode CNE and a second pad electrode PD2 of theconnection pad PD may be located on the third insulating layer 130.

The first anode AE1 may overlap the first light emitting region LA1, andat least a part of the first anode AE1 may extend to the non-lightemitting region NLA. The second anode AE2 may overlap the second lightemitting region LA2, and at least a part of the second anode AE2 mayextend to the non-light emitting region NLA. The third anode AE3 mayoverlap the third light emitting region LA3, and at least a part of thethird anode AE3 may extend to the non-light emitting region NLA. Thefirst anode AE1 may penetrate or be disposed through the thirdinsulating layer 130 and may be connected to the drain electrode DE of athin-film transistor TL corresponding to the first anode AE1. The secondanode AE2 may penetrate or be disposed through the third insulatinglayer 130 and may be connected to the drain electrode DE of a thin-filmtransistor TL corresponding to the second anode AE2. The third anode AE3may penetrate or be disposed through the third insulating layer 130 andmay be connected to the drain electrode DE of a thin-film transistor TLcorresponding to the third anode AE3.

In an embodiment, the first anode AE1, the second anode AE2, and thethird anode AE3 may be reflective electrodes. In such an embodiment,each of the first anode AE1, the second anode AE2, and the third anodeAE3 may be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd,Au, Ni, Nd, Ir or Cr. In an embodiment, each of the first anode AE1, thesecond anode AE2, and the third anode AE3 may further include a metaloxide layer stacked on the metal layer. In an embodiment, each of thefirst anode AE1, the second anode AE2, and the third anode AE3 may havea two-layer structure of ITO/Ag, Ag/ITO, ITO/Mg or ITO/MgF or athree-layer structure of ITO/Ag/ITO.

The connection electrode CNE may be electrically connected to the powersupply wiring VSL in the non-display area NDA and may directly contactthe power supply wiring VSL.

The second pad electrode PD2 may be located on the first pad electrodePD1 in the non-display area NDA. The second pad electrode PD2 maydirectly contact the first pad electrode PD1 and may be electricallyconnected to the first pad electrode PD1.

In an embodiment, the connection electrode CNE and the second padelectrode PD2 may include or be made of the same material as the firstanode AE1, the second anode AE2 and the third anode AE3 and may beformed in the process of manufacturing the first anode AE1, the secondanode AE2 and the third anode AE3.

A pixel defining layer 150 may be located on the first anode AE1, thesecond anode AE2, and the third anode AE3 in the display substrate 10.In such an embodiment, an opening exposing the first anode AE1, anopening exposing the second anode AE2 and an opening exposing the thirdanode AE3 may be defined through the pixel defining layer 150, and maydefine the first light emitting region LA1, the second light emittingregion LA2, the third light emitting region LA3 and the non-lightemitting region NLA. In an embodiment, a region of the first anode AE1which is not covered by the pixel defining layer 150 may be the firstlight emitting region LA1. In such an embodiment, a region of the secondanode AE2 which is not covered by the pixel defining layer 150 may bethe second light emitting region LA2, and a region of the third anodeAE3 which is not covered by the pixel defining layer 150 may be thethird light emitting region LA3. In such an embodiment, a region wherethe pixel defining layer 150 is located may be the non-light emittingregion NLA.

In an embodiment, the pixel defining layer 150 may include an organicinsulating material such as polyacrylates resin, epoxy resin, phenolicresin, polyamides resin, polyimides resin, unsaturated polyesters resin,polyphenylenethers resin, polyphenylenesulfides resin orbenzocyclobutene (“BCB”).

In an embodiment, the pixel defining layer 150 may overlap a colorpattern 250 and a light blocking pattern 260 to be described later.

In an embodiment, the pixel defining layer 150 may overlap a bankpattern 370 to be described later.

In an embodiment, as illustrated in FIGS. 9 and 12, a light emittinglayer OL may be located on the first anode AE1, the second anode AE2,and the third anode AE3 in the display substrate 10.

In an embodiment, the light emitting layer OL may be in the shape of acontinuous layer formed over the light emitting regions LA1 through LA3and the non-light emitting region NLA. In an embodiment, the lightemitting layer OL is located only in the display area DA as shown in thedrawings, but the disclosure is not limited thereto. In an alternativeembodiment, a part of the light emitting layer OL may be further locatedin the non-display area NDA. The light emitting layer OL will bedescribed in greater detail later.

The cathode CE may be located on the light emitting layer OL in thedisplay substrate 10. A part of the cathode CE may be further located inthe non-display area NDA as illustrated in FIG. 12. The cathode CE maybe electrically connected to the connection electrode CNE and maycontact the connection electrode CNE in the non-display area NDA. Adriving voltage (e.g., the ELVSS voltage) provided to the power supplywiring VSL may be transferred to the cathode CE via the connectionelectrode CNE.

In an embodiment, the cathode CE may have translucency or transparency.In an embodiment where the cathode CE has translucency, the cathode CEmay include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ci,LiF/Al, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Agand Mg). In such an embodiment, a thickness of the cathode CE is tens tohundreds of angstroms, such that the cathode CE may have translucency.

In an embodiment, where the cathode CE has transparency, the cathode CEmay include a transparent conductive oxide (“TCO”). In one embodiment,for example, the cathode CE may include tungsten oxide (WxOx), titaniumoxide (TiO₂), ITO, indium zinc oxide (“IZO”), zinc oxide (ZnO), indiumtin zinc oxide (“ITZO”), or magnesium oxide (MgO).

In an embodiment, the cathode CE may completely cover the light emittinglayer OL. In an embodiment, as illustrated in FIG. 12, an end of thecathode CE may be located relatively outward than an end of the lightemitting layer OL, and the end of the light emitting layer OL may becompletely covered by the cathode CE.

The first anode AE1, the light emitting layer OL and the cathode CE mayconstitute a first light emitting element ED1, the second anode AE2, thelight emitting layer OL and the cathode CE may constitute a second lightemitting element ED2, and the third anode AE3, the light emitting layerOL and the cathode CE may constitute a third light emitting element ED3.Each of the first light emitting element ED1, the second light emittingelement ED2, and the third light emitting element ED3 may emit outputlight LE

In an embodiment, as illustrated in FIG. 10, the output light LE finallyemitted from the light emitting layer OL may be a mixture of a firstcomponent LE1 and a second component LE2. Each of the first componentLE1 and the second component LE2 in the output light LE may have a peakwavelength of about 440 nm to about 480 nm. In such an embodiment, theoutput light LE may be blue light.

As illustrated in FIG. 10, in an embodiment, the light emitting layer OLmay have a structure in which a plurality of light emitting layersoverlap or are stacked one on another, for example, may have a tandemstructure. In one embodiment, for example, the light emitting layer OLmay include a first stack ST1 including a first light emitting layerEML1, a second stack ST2 located on the first stack ST1 and including asecond light emitting layer EML2, a third stack ST3 located on thesecond stack ST2 and including a third light emitting layer EML3, afirst charge generation layer CGL1 located between the first stack ST1and the second stack ST2, and a second charge generation layer CGL2located between the second stack ST2 and the third stack ST3. The firststack ST1, the second stack ST2, and the third stack ST3 may overlapeach other.

The first light emitting layer EML1, the second light emitting layerEML2, and the third light emitting layer EML3 may overlap each other.

In an embodiment, the first light emitting layer EML1, the second lightemitting layer EML2 and the third light emitting layer EML3 may all emitlight of the third color, for example, blue light. In one embodiment,for example, each of the first light emitting layer EML1, the secondlight emitting layer EML2 and the third light emitting layer EML3 may bea blue light emitting layer and may include an organic material.

In an embodiment, at least one selected from the first light emittinglayer EML1, the second light emitting layer EML2 and the third lightemitting layer EML3 may emit first blue light having a first peakwavelength, and at least another one selected from the first lightemitting layer EML1, the second light emitting layer EML2 and the thirdlight emitting layer EML3 may emit second blue light having a secondpeak wavelength different from the first peak wavelength. In oneembodiment, for example, one of the first light emitting layer EML1, thesecond light emitting layer EML2 and the third light emitting layer EML3may emit the first blue light having the first peak wavelength, and theother two of the first light emitting layer EML1, the second lightemitting layer EML2 and the third light emitting layer EML3 may emit thesecond blue light having the second peak wavelength. In such anembodiment, the output light LE finally emitted from the light emittinglayer OL may be a mixture of the first component LE1 and the secondcomponent LE2, the first component LE1 may be the first blue lighthaving the first peak wavelength, and the second component LE2 may bethe second blue light having the second peak wavelength.

In an embodiment, one of the first peak wavelength and the second peakwavelength may be in a range of about 440 nm to about 460 nm. The otherone of the first peak wavelength and the second peak wavelength may bein a range of about 460 nm to about 480 nm. However, the range of thefirst peak wavelength and the range of the second peak wavelength arenot limited thereto. In one embodiment, for example, the range of thefirst peak wavelength and the range of the second peak wavelength mayall include about 460 nm. In an embodiment, one of the first blue lightand the second blue light may be light of a deep blue color, and theother one of the first blue light and the second blue light may be lightof a sky blue color.

According to an embodiment, the output light LE emitted from the lightemitting layer OL is blue light and may include a long wavelengthcomponent and a short wavelength component. Therefore, the lightemitting layer OL may finally emit blue light having a broader or wideemission peak as the output light LE, thereby improving color visibilityat a side viewing angle compared with a conventional light emittingelement that emits blue light having a sharp or narrow emission peak.

In an embodiment, each of the first light emitting layer EML1, thesecond light emitting layer EML2 and the third light emitting layer EML3may include a host and a dopant. The host is not particularly limited aslong as it is a commonly used material. In one embodiment, for example,the host may include tris(8-hydroxyquinolino)aluminum (“Alq3”),4,4′-bis(N-carbazolyl)-1,1′-biphenyl (“CBP”), poly(n-vinylcabazole)(“PVK”), 9,10-di(naphthalene-2-yl)anthracene (“ADN”),4,4′,4″-tris(carbazol-9-yl)-triphenylamine (“TCTA”),1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (“TPBi”),3-tert-butyl-9,10-di(naphth-2-yl)anthracene (“TBADN”), distyrylarylene(“DSA”), 4,4′-bis(9-carbazolyl)-2,2″-dimethyl-biphenyl (“CDBP”), or2-methyl-9,10-bis(naphthalen-2-yl)anthracene) (“MADN”).

Each of the first light emitting layer EML1, the second light emittinglayer EML2 and the third light emitting layer EML3 which emit blue lightmay include a fluorescent material containing any one of spiro-DPVBi,spino-6P, distyry1-benzene (“DSB”), distyryl-arylene (DSA), apolyfluorene (“PFO”)-based polymer, and a poly (p-phenylene vinylene)(“PPV”)-based polymer. Alternatively, each of the first light emittinglayer EML1, the second light emitting layer EML2 and the third lightemitting layer EML3 may include a phosphorescent material containing anorganometallic complex such as (4,6-F2ppy)2Irpic.

As described above, at least one selected from the first light emittinglayer EML1, the second light emitting layer EML2 and the third lightemitting layer EML3 and at least another one selected from the firstlight emitting layer EML1, the second light emitting layer EML2 and thethird light emitting layer EML3 emit light in different wavelengthranges from each other. In such an embodiment, the first light emittinglayer EML1, the second light emitting layer EML2 and the third lightemitting layer EML3 may include a same material as each other, and amethod of adjusting a resonance distance may be used to emit blue lightin different wavelength ranges. Alternatively, at least one selectedfrom the first light emitting layer EML1, the second light emittinglayer EML2 and the third light emitting layer EML3 and at least anotherone selected from the first light emitting layer EML1, the second lightemitting layer EML2 and the third light emitting layer EML3 may includedifferent materials from each other to emit blue light in differentwavelength ranges.

However, the disclosure is not limited thereto. The first light emittinglayer EML1, the second light emitting layer EML2, and the third lightemitting layer EML3 may all emit blue light having a peak wavelength ofabout 440 nm to about 480 nm, and may include or be made of a samematerial as each other.

Alternatively, one of the first light emitting layer EML1, the secondlight emitting layer EML2 and the third light emitting layer EML3 mayemit the first blue light having the first peak wavelength, another oneof the first light emitting layer EML1, the second light emitting layerEML2 and the third light emitting layer EML3 may emit the second bluelight having the second peak wavelength different from the first peakwavelength, and the other one of the first light emitting layer EML1,the second light emitting layer EML2 and the third light emitting layerEML3 may emit third blue light having a third peak wavelength differentfrom the first peak wavelength and the second peak wavelength. In anembodiment, one of the first peak wavelength, the second peakwavelength, and the third peak wavelength may be in a range of about 440nm to about 460 nm. In such an embodiment, another one of the first peakwavelength, the second peak wavelength, and the third peak wavelengthmay be in a range of about 460 nm to about 470 nm, and the other one ofthe first peak wavelength, the second peak wavelength, and the thirdpeak wavelength may be in a range of about 470 nm to about 480 nm.

According to an embodiment, the output light LE emitted from the lightemitting layer OL is blue light and includes a long wavelengthcomponent, a medium wavelength component, and a short wavelengthcomponent. Therefore, the light emitting layer OL may finally emit bluelight having a broader emission peak as the output light LE and improvecolor visibility at a side viewing angle.

According to embodiments described above, light efficiency can beincreased, and the life of the display device can be extended ascompared with a conventional light emitting element that does not employa tandem structure, that is, a structure in which a plurality of lightemitting layers are stacked.

Alternatively, at least any one selected from the first light emittinglayer EML1, the second light emitting layer EML2 and the third lightemitting layer EML3 may emit light of the third color, for example, bluelight, and at least another one selected from the first light emittinglayer EML1, the second light emitting layer EML2 and the third lightemitting layer EML3 may emit light of the second color, for example,green light. In an embodiment, blue light emitted from at least any oneselected from the first light emitting layer EML1, the second lightemitting layer EML2 and the third light emitting layer EML3 may have apeak wavelength in a range of about 440 nm to about 480 nm or in a rangeof about 460 nm to about 480 nm. Green light emitted from at leastanother one selected from the first light emitting layer EML1, thesecond light emitting layer EML2 and the third light emitting layer EML3may have a peak wavelength in a range of about 510 nm to about 550 nm.

In one embodiment, for example, one of the first light emitting layerEML1, the second light emitting layer EML2 and the third light emittinglayer EML3 may be a green light emitting layer that emits green light,and the other two of the first light emitting layer EML1, the secondlight emitting layer EML2 and the third light emitting layer EML3 may beblue light emitting layers that emit blue light. In such an embodimentwhere the other two of the first light emitting layer EML1, the secondlight emitting layer EML2 and the third light emitting layer EML3 areblue light emitting layers, blue light emitted from the two blue lightemitting layers may have a same peak wavelength range as each other ordifferent peak wavelength ranges from each other.

According to an embodiment, the output light LE emitted from the lightemitting layer OL may be a mixture of the first component LE1 which isblue light and the second component LE2 which is green light. In oneembodiment, for example, when the first component LE1 is deep blue lightand the second component LE2 is green light, the output light LE may belight having a sky blue color. Similarly to the above-describedembodiments, the output light LE emitted from the light emitting layerOL is a mixture of blue light and green light and includes a longwavelength component and a short wavelength component. Therefore, thelight emitting layer OL may finally emit blue light having a broaderemission peak as the output light LE and improve color visibility at aside viewing angle. In addition, since the second component LE2 of theoutput light LE is green light, a green light component of lightprovided from the display device 1 to the outside can be supplemented.Accordingly, the color reproducibility of the display device 1 can beimproved.

In an embodiment, a green light emitting layer among the first lightemitting layer EML1, the second light emitting layer EML2, and the thirdlight emitting layer EML3 may include a host and a dopant. The hostincluded in the green light emitting layer is not particularly limitedas long as it is a commonly used material. In one embodiment, forexample, the host may include Alq3, CBP, PVK, ADN, TCTA, TPBi, TBADN,DSA, CDBP, or 2MADN.

The dopant included in the green light emitting layer may be, forexample, a fluorescent material including Alq3 or a phosphorescentmaterial such as fac tris(2-phenylpyridine)iridium (“Ir(ppy)3”),bis(2-phenylpyridine)(acetylacetonate)iridium(III) (Ir(ppy)2(“acac”)),or 2-phenyl-4-methyl-pyridine iridium (“Ir(mpyp)3”).

The first charge generation layer CGL1 may be located between the firststack ST1 and the second stack ST2. The first charge generation layerCGL1 may inject electric charges into each light emitting layer. Thefirst charge generation layer CGL1 may control the charge balancebetween the first stack ST1 and the second stack ST2. The first chargegeneration layer CGL1 may include an n-type charge generation layerCGL11 and a p-type charge generation layer CGL12. The p-type chargegeneration layer CGL12 may be disposed on the n-type charge generationlayer CGL11 and may be located between the n-type charge generationlayer CGL11 and the second stack ST2.

The first charge generation layer CGL1 may have a structure in which then-type charge generation layer CGL11 and the p-type charge generationlayer CGL12 are in contact with each other. The n-type charge generationlayer CGL11 is disposed closer to the anode AE1 (AE2 of FIG. 7, AE3 ofFIG. 7) among the anode AE1 (AE2 of FIG. 7, AE3 of FIG. 7) and thecathode CE. The p-type charge generation layer CGL12 is disposed closerto the cathode CE among the anode AE1 (AE2 of FIG. 7, AE3 of FIG. 7) andthe cathode CE. The n-type charge generation layer CGL11 supplieselectrons to the first light emitting layer EML1 adjacent to the anodeAE1 (AE2 of FIG. 7, AE3 of FIG. 7), and the p-type charge generationlayer CGL12 supplies holes to the second light emitting layer EML2included in the second stack ST2. In such an embodiment, the firstcharge generation layer CGL1 is disposed between the first stack ST1 andthe second stack ST2 to provide electric charges to each light emittinglayer, such that luminous efficiency may be improved, and a drivingvoltage may be lowered.

The first stack ST1 may be located on the first anode AE1, the secondanode AE2 (see FIG. 7) and the third anode AE3 (see FIG. 7) and mayfurther include a first hole transport layer HTL1, a first electronblocking layer BIL1 and a first electron transport layer ETL1.

The first hole transport layer HTL1 may be located on the first anodeAE1, the second anode AE2 (see FIG. 7), and the third anode AE3 (seeFIG. 7). The first hole transport layer HTL1 may facilitate thetransportation of holes and may include a hole transport material. Thehole transport material may include, but is not limited to, a carbazolederivative such as N-phenylcarbazole or polyvinylcarbazole; a fluorenederivative; a triphenylamine derivative such asN,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine(“TPD”) or 4,4′,4″-tris(N-carbazolyl)triphenylamine (“TCTA”);N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine) (“NPB”); or4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine] (“TAPC”).

The first electron blocking layer BIL1 may be located on the first holetransport layer HTL1 and may be located between the first hole transportlayer HTL1 and the first light emitting layer EML1. The first electronblocking layer BIL1 may include a hole transport material and a metal ora metal compound to prevent electrons generated by the first lightemitting layer EML1 from entering the first hole transport layer HTL1.In an embodiment, the first hole transport layer HTL1 and the firstelectron blocking layer BIL1 may be formed as a single layer in whichrespective materials thereof are mixed.

The first electron transport layer ETL1 may be located on the firstlight emitting layer EML1 and may be located between the first chargegeneration layer CGL1 and the first light emitting layer EML1. In anembodiment, the first electron transport layer ETL1 may include anelectron transport material such as Alq3, TPBi,2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (“BCP”),4,7-diphenyl-1,10-phenanthroline (“Bphen”),3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (“TAZ”),4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (“NTAZ”),2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (“tBu-PBD”),bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato)aluminum(“BAlq”), berylliumbis(benzoquinolin-10-olate) (“Bebq2”), ADN, or amixture thereof. However, the disclosure is not limited to the type ofthe electron transport material. The second stack ST2 may be located onthe first charge generation layer CGL1 and may further include a secondhole transport layer HTL2, a second electron blocking layer BIL2 and asecond electron transport layer ETL2.

The second hole transport layer HTL2 may be located on the first chargegeneration layer CGL1. The second hole transport layer HTL2 may includeor be made of a same material as the first hole transport layer HTL1 ormay include at least one material selected from the materials listedabove for the first hole transport layer HTL1. The second hole transportlayer HTL2 may be a single layer or defined by a plurality of layers.

The second electron blocking layer BIL2 may be located on the secondhole transport layer HTL2 and may be located between the second holetransport layer HTL2 and the second light emitting layer EML2. Thesecond electron blocking layer BIL2 may have the same material andstructure as the first electron blocking layer BIL1 or may include atleast one material selected from the materials listed above for thefirst electron blocking layer BIL1.

The second electron transport layer ETL2 may be located on the secondlight emitting layer EML2 and may be located between the second chargegeneration layer CGL2 and the second light emitting layer EML2. Thesecond electron transport layer ETL2 may have the same material andstructure as the first electron transport layer ETL1 or may include atleast one material selected from the materials listed above for thefirst electron transport layer ETL1. The second electron transport layerETL2 may be a single layer or defined by a plurality of layers.

The second charge generation layer CGL2 may be located on the secondstack ST2 and may be located between the second stack ST2 and the thirdstack ST3.

The second charge generation layer CGL2 may have the same structure asthe first charge generation layer CGL1 described above. In oneembodiment, for example, the second charge generation layer CGL2 mayinclude an n-type charge generation layer CGL21 disposed closer to thesecond stack ST2 and a p-type charge generation layer CGL22 disposedcloser to the cathode CE. The p-type charge generation layer CGL2 may bedisposed on the n-type charge generation layer CGL21.

The second charge generation layer CGL2 may have a structure in whichthe n-type charge generation layer CGL21 and the p-type chargegeneration layer CGL22 are in contact with each other. The first chargegeneration layer CGL1 and the second charge generation layer CGL2 mayinclude or be made of different materials or the same material.

The third stack ST3 may be located on the second charge generation layerCGL2 and may further include a third hole transport layer HTL3 and athird electron transport layer ETL3.

The third hole transport layer HTL3 may be located on the second chargegeneration layer CGL2. The third hole transport layer HTL3 may includeor be made of the same material as the first hole transport layer HTL1or may include at least one material selected from the materials listedabove for the first hole transport layer HTL1. The third hole transportlayer HTL3 may be a single layer or defined by a plurality of layers. Inan embodiment where the third hole transport layer HTL3 is defined by aplurality of layers, the layers may include different materials fromeach other.

The third electron transport layer ETL3 may be located on the thirdlight emitting layer EML3 and may be located between the cathode CE andthe third light emitting layer EML3. The third electron transport layerETL3 may have the same material and structure as the first electrontransport layer ETL1 or may include at least one material selected fromthe materials listed above for the first electron transport layer ETL1.The third electron transport layer ETL3 may be a single layer or definedby a plurality of layers. In an embodiment where the third electrontransport layer ETL3 is defined a plurality of layers, the layers mayinclude different materials from each other.

Although not illustrated in the drawing, a hole injection layer may befurther located between the first stack ST1 and the first anode AE1,between the second anode AE2 (see FIG. 7) and the third anode AE3 (seeFIG. 7), between the second stack ST2 and the first charge generationlayer CGL1, or between the third stack ST3 and the second chargegeneration layer CGL2. The hole injection layer may facilitate theinjection of holes into the first light emitting layer EML1, the secondlight emitting layer EML2 and the third light emitting layer EML3. In anembodiment, the hole injection layer may include or be made of, but notlimited to, any at least one selected from copper phthalocyanine(“CuPc”), poly(3,4-ethylenedioxythiphene) (“PEDOT”), polyaniline(“PANI”), and N,N-dinaphthyl-N,N′-diphenyl benzidine (“NPD”). In anembodiment, the hole injection layer may be located between the firsstack ST1 and the first anode AE1, between the second anode AE2 (seeFIG. 7) and the third anode AE3 (see FIG. 7), between the second stackST2 and the first charge generation layer CGL1, and between the thirdstack ST3 and the second charge generation layer CGL2.

Although not illustrated in the drawings, an electron injection layermay be further located between the third electron transport layer ETL3and the cathode CE, between the second charge generation layer CGL2 andthe second stack ST2, or between the first charge generation layer CGL1and the first stack ST1. The electron injection layer may facilitate theinjection of electrons and may include Alq3, PBD, TAZ, Spiro-PBD, BAlq,or SAlq, but the disclosure is not limited thereto. In an embodiment,the electron injection layer may be a metal halide compound and may be,for example, at least one selected from MgF₂, LiF, NaF, KF, RbF, CsF,FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2, but the disclosure is notlimited thereto. Alternatively, the electron injection layer may includea lanthanum material such as Yb, Sm, or Eu. Alternatively, the electroninjection layer may include both a metal halide material and alanthanium material such as RbI:Yb or KI:Yb. In an embodiment where theelectron injection layer includes both a metal halide material and alanthanium material, the electron injection layer may be formed byco-deposition of the metal halide material and the lanthanum material.In an embodiment, the electron injection layer may be located betweenthe third electron transport layer ETL3 and the cathode CE, between thesecond charge generation layer CGL2 and the second stack ST2 and betweenthe first charge generation layer CGL1 and the first stack ST1.

The structure of the light emitting layer OL may also be modified fromthe above structure. In one alternative embodiment, for example, thelight emitting layer OL may be modified as illustrated in FIG. 11. Insuch an embodiment, as illustrated in FIG. 11, the light emitting layerOLa may further include a fourth stack ST4 located between the thirdstack ST3 and the second stack ST2 and may further include a thirdcharge generation layer CGL3 located between the third stack ST3 and thesecond stack ST2.

The fourth stack ST4 may include a fourth light emitting layer EML4 andmay further include a fourth hole transport layer HTL4, a third electronblocking layer BIL4 and a fourth electron transport layer ETL4.

Each of the first light emitting layer EML1, the second light emittinglayer EML2, the third light emitting layer EML3 and the fourth lightemitting layer EML4 included in the light emitting layer OLa may emitlight of the third color, for example, blue light. At least one selectedfrom the first light emitting layer EML1, the second light emittinglayer EML2, the third light emitting layer EML3 and the fourth lightemitting layer EML4 and at least another one selected from the firstlight emitting layer EML1, the second light emitting layer EML2, thethird light emitting layer EML3 and the fourth light emitting layer EML4may emit blue light having different peak wavelength ranges from eachother.

Alternatively, at least any one selected from the first light emittinglayer EML1, the second light emitting layer EML2, the third lightemitting layer EML3 and the fourth light emitting layer EML4 may emitgreen light, and at least another one selected from the first lightemitting layer EML1, the second light emitting layer EML2, the thirdlight emitting layer EML3 and the fourth light emitting layer EML4 mayemit blue light. In one embodiment, for example, one of the first lightemitting layer EML1, the second light emitting layer EML2, the thirdlight emitting layer EML3 and the fourth light emitting layer EML4 maybe a green light emitting layer, and the other three of the first lightemitting layer EML1, the second light emitting layer EML2, the thirdlight emitting layer EML3 and the fourth light emitting layer EML4 mayall be blue light emitting layers.

The fourth hole transport layer HTL4 may be located on the second chargegeneration layer CGL2. The fourth hole transport layer HTL4 may includeor be made of the same material as the first hole transport layer HTL1or may include at least one material selected from the materials listedabove for the first hole transport layer HTL1. The fourth hole transportlayer HTL4 may be a single layer or defined by a plurality of layers. Inan embodiment where the fourth hole transport layer HTL4 is defined by aplurality of layers, the layers may include different materials fromeach other.

The third electron blocking layer BIL3 may be located on the fourth holetransport layer HTL4 and may be located between the fourth holetransport layer HTL4 and the fourth light emitting layer EML4. The thirdelectron blocking layer BIL3 may have the same material and structure asthe first electron blocking layer BIL1 or may include at least onematerial selected from the materials listed above for the first electronblocking layer BIL1. In an alternative embodiment, the third electronblocking layer BIL3 may be omitted.

The fourth electron transport layer ETL4 may be located on the fourthlight emitting layer EML4 and may be located between the third chargegeneration layer CGL3 and the fourth light emitting layer EML4. Thefourth electron transport layer ETL4 may have the same material andstructure as the first electron transport layer ETL1 or may include atleast one material selected from the materials listed above for thefirst electron transport layer ETL1. The fourth electron transport layerETL4 may be a single layer or defined by a plurality of layers. In anembodiment where the fourth electron transport layer ETL4 is composed ofa plurality of layers, the layers may include different materials fromeach other.

The third charge generation layer CGL3 may have the same structure asthe first charge generation layer CGL1 described above. In oneembodiment, for example, the third charge generation layer CGL3 mayinclude an n-type charge generation layer CGL31 disposed closer to thesecond stack ST2 and a p-type charge generation layer CGL32 disposedcloser to the cathode CE. The p-type charge generation layer CGL32 maybe disposed on the n-type charge generation layer CGL31.

Although not illustrated in the drawing, the electron injection layermay be further located between the fourth stack ST4 and the third chargegeneration layer CGL3. In such an embodiment, the hole injection layermay be further located between the fourth stack ST4 and the secondcharge generation layer CGL2.

In an embodiment, as shown in FIGS. 10 and 11, the light emitting layerOL or OLa may not include a red light emitting layer and thus may notemit light of the first color, for example, red light. In such anembodiment, the output light LE may not include a light component whosepeak wavelength is in a range of about 610 nm to about 650 nm and mayinclude only a light component whose peak wavelength is in a range ofabout 440 nm to about 550 nm.

In an embodiment, as illustrated in FIGS. 12 and 13, the dam member DMand the first support member OS1 may be located on the second insulatinglayer 117 in the non-display area NDA.

The dam member DM may be located relatively outward than the powersupply wiring VSL. In such an embodiment, as illustrated in FIG. 12, thepower supply wiring VSL may be located between the dam member DM and thedisplay area DA.

In an embodiment, a part of the dam member DM may overlap the powersupply wiring VSL.

In an embodiment, the dam member DM may include a plurality of dams. Inone embodiment, for example, the dam member DM may include a first damD1 and a second dam D2.

The first dam D1 may partially overlap the power supply wiring VSL andmay be spaced apart from the third insulating layer 130 with the powersupply wiring VSL interposed between them. In an embodiment, the firstdam D1 may include a first lower dam pattern D11 located on the secondinsulating layer 117 and a first upper dam pattern D12 located on thefirst lower dam pattern D11.

The second dam D2 may be located outside of the first dam D1 and spacedapart from the first dam D1. In an embodiment, the second dam D2 mayinclude a second lower dam pattern D21 located on the second insulatinglayer 117 and a second upper dam pattern D22 located on the second lowerdam pattern D21.

In an embodiment, the first lower dam pattern D11 and the second lowerdam pattern D21 may include or be made of the same material as the thirdinsulating layer 130 and may be formed simultaneously with the thirdinsulating layer 130 during a same process.

In an embodiment, the first upper dam pattern D12 and the second upperdam pattern D2 may include or be made of the same material as the pixeldefining layer 150 and may be formed simultaneously with the pixeldefining layer 150 during a same process.

In an embodiment, the first dam D1 and the second dam D2 may havedifferent heights from each other. In one embodiment, for example, theheight of the second dam D2 may be greater than the height of the firstdam D1. In such an embodiment, as the distance from the display area DAincreases, the heights of dams included in the dam member DM maygradually increase. Accordingly, an organic material may be moreeffectively blocked from overflowing in the process of forming anorganic layer 173 included in an encapsulation layer 170 to be describedlater.

The first support member OS1 may be located relatively outward than thedam member DM. In such an embodiment, as illustrated in FIGS. 12 and 13,the dam member DM may be located between the first portion OS1 a of thefirst support member OS1 and the display area DA and between the secondportion OS1 b of the first support member OS1 and the display area DA.The first support member OS1 may support masks used in the process ofmanufacturing the light emitting layer OL, the cathode CE, a firstcapping layer 160 and the encapsulation layer 170 as described above,that is, may function as a mask support.

In an embodiment, as shown in FIG. 12, the first portion OS1 a of thefirst support member OS1 may overlap the first gate metal WR1 includinga wiring connected to the connection pad PD.

In an embodiment, the first portion OS1 a of the first support memberOS1 may include a first lower support pattern OS11 a located on thesecond insulating layer 117 and a first upper support pattern OS12 alocated on the first lower support pattern OS11 a.

In an embodiment, the second portion OS1 b of the first support memberOS1 may include a second lower support pattern OS11 b located on thesecond insulating layer 117 and a second upper support pattern OS12 blocated on the second lower support pattern OS11 b.

In an embodiment, the first lower support pattern OS11 a and the secondlower support pattern OS11 b may include or be made of the same materialas the third insulating layer 130 and may be formed simultaneously withthe third insulating layer 130 during a same process.

In an embodiment, the first upper support pattern OS12 a and the secondupper support pattern OS12 b may include or be made of the same materialas the pixel defining layer 150 and may be formed simultaneously withthe pixel defining layer 150 during a same process.

As described above, in an embodiment, the second portion OS1 b of thefirst support member OS1 may be substantially aligned with the edges ofthe display device 1 or the edges of the first base 110.

In an embodiment, the second portion OS1 b of the first support memberOS1 may overlap the second gate metal WR2 including a part of the gatedriving circuit.

In an embodiment, two side surfaces of the second portion OS1 b of thefirst support member OS1 may have different inclination angles from eachother.

In one embodiment, for example, as illustrated in FIG. 14, a surfacealigned with the edges of the display device 1 among both side surfacesof the second portion OS1 b may be referred to as a first side surfaceOSE1, and a side surface facing the first side surface OSE1 may bereferred to as a second side surface OSE2. In such an embodiment, aninclination angle a1 of the second lower support pattern OS11 b at thefirst side surface OSE1 may be different from an inclination angle a2 ofthe second lower support pattern OS11 b at the second side surface OSE2.In an embodiment, the inclination angle a1 of the second lower supportpattern OS11 b may be greater than the inclination angle a2 of thesecond lower support pattern OS11 b. In an embodiment, an inclinationangle a3 of the second upper support pattern OS12 b at the first sidesurface OSE1 may be different from an inclination angle a4 of the secondupper support pattern OS12 b at the second side surface OSE2. In anembodiment, the inclination angle a3 of the second upper support patternOS12 b may be greater than the inclination angle a4 of the second uppersupport pattern OS12 b. The first side surface OSE1 of the first lowersupport pattern OS11 a may be a surface polished in a manufacturingprocess of the display device 1, and the second side surface OSE2 of thesecond lower support pattern OS11 b may be a surface not polished in themanufacturing process of the display device 1. Accordingly, both sidesurfaces of the second lower support pattern OS11 b may have differentinclination angles from each other.

As illustrated in FIGS. 9, 12 and 13, the first capping layer 160 may belocated on the cathode CE. The first capping layer 160 may be disposedin or to cover all of the first light emitting region LA1, the secondlight emitting region LA2, the third light emitting region LA3, and thenon-light emitting region NLA. The first capping layer 160 may improveviewing angle characteristics and increase external luminous efficiency.

The first capping layer 160 may include an inorganic material and/or anorganic material having light transmitting properties. In an embodiment,the first capping layer 160 may be an inorganic layer, an organic layer,or an organic layer including inorganic particles. In one embodiment,for example, the first capping layer 160 may include a triaminederivative, a carbazole biphenyl derivative, an arylenediaminederivative, or Alq3.

In an embodiment, the first capping layer 160 may include or be made ofa mixture of a high refractive index material and a low refractive indexmaterial. Alternatively, the first capping layer 160 may include twolayers having different refractive indices from each other, for example,a high refractive index layer and a lower refractive index layer.

In an embodiment, the first capping layer 160 may completely cover thecathode CE. In an embodiment, as illustrated in FIGS. 12 and 13, an endof the first capping layer 160 may be located relatively outward than anend of the cathode CE, and the end of the cathode CE may be completelycovered by the first capping layer 160.

The encapsulation layer 170 may be disposed on the first capping layer160. The encapsulation layer 170 protects elements located under theencapsulation layer 170, for example, the light emitting elements ED1through ED3 from external foreign substances such as moisture. Theencapsulation layer 170 is disposed in all of the first light emittingregion LA1, the second light emitting region LA2, the third lightemitting region LA3, and the non-light emitting region NLA. In anembodiment, the encapsulation layer 170 may directly cover the cathodeCE. In an embodiment, a capping layer (not illustrated) may be furtherdisposed between the encapsulation layer 170 and the cathode CE to coverthe cathode CE. In such an embodiment, the encapsulation layer 170 maydirectly cover the capping layer. The encapsulation layer 170 may be athin-film encapsulation layer.

In an embodiment, the encapsulation layer 170 may include a lowerinorganic layer 171, the organic layer 173, and an upper inorganic layer175 sequentially stacked on the first capping layer 160.

In an embodiment, the lower inorganic layer 171 may cover the firstlight emitting element ED1, the second light emitting element ED2, andthe third light emitting element ED3 in the display area DA. The lowerinorganic layer 171 may cover the dam member DM in the non-display areaNDA and extend to the outside of the dam member DM. In an embodiment, anend of the lower inorganic layer 171 may be spaced apart from the firstsupport member OS1 and may be located between the first portion OS1 a ofthe first support member OS1 and the dam member DM and between thesecond portion OS1 b of the first support member OS1 and the dam memberDM.

In an embodiment, the lower inorganic layer 171 may completely cover thefirst capping layer 160. In an embodiment, as illustrated in FIGS. 12and 13, an end of the lower inorganic layer 171 may be locatedrelatively outward than an end of the first capping layer 160, and theend of the first capping layer 160 may be completely covered by thelower inorganic layer 171.

The organic layer 173 may be located on the lower inorganic layer 171.The organic layer 173 may cover the first light emitting element ED1,the second light emitting element ED2, and the third light emittingelement ED3 in the display area DA. In an embodiment, a part of theorganic layer 173 may be located in the non-display area NDA but may notbe located outside of the dam member DM. In an embodiment, as shown inFIGS. 12 and 13, a part of the organic layer 173 may be located insidethe first dam D1, but the disclosure is not limited thereto. In analternative embodiment, a part of the organic layer 173 may beaccommodated in a space between the first dam D1 and the second dam D2,and an end of the organic layer 173 may be located in a region betweenthe first dam D1 and the second dam D2.

The upper inorganic layer 175 may be located on the organic layer 173.The upper inorganic layer 175 may cover the organic layer 173. In anembodiment, the upper inorganic layer 175 may directly contact the lowerinorganic layer 171 in the non-display area NDA to form aninorganic-inorganic bond, and an end of the upper inorganic layer 175may be located between the dam member DM and the first support memberOS1. In an embodiment, the end of the upper inorganic layer 175 and theend of the lower inorganic layer 171 may be substantially aligned witheach other.

In an embodiment where the lower inorganic layer 171 and the upperinorganic layer 175 are spaced apart from the first support member OS1,the first support member OS1 may absorb external impacts even if a sidepolishing process for polishing side surfaces of the display device 1 isperformed in the manufacturing process of the display device 1. In suchan embodiment, the first support member OS1 may function as a crack dam.Therefore, an impact may be effectively prevented from being transmittedto the lower inorganic layer 171 and the upper inorganic layer 175 togenerate cracks or propagate generated cracks. Accordingly, thereliability of the display device 1 may be improved.

In an embodiment, each of the lower inorganic layer 171 and the upperinorganic layer 175 may include or be made of silicon nitride, aluminumnitride, zirconium nitride, titanium nitride, hafnium nitride, tantalumnitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide,cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

In an embodiment, each of the lower inorganic layer 171 and the upperinorganic layer 175 may be a single layer, but the disclosure is notlimited thereto. Alternatively, at least one of the lower inorganiclayer 171 and the upper inorganic layer 175 may have a multilayerstructure, that is, a structure in which a plurality of layers, eachincluding or made of an inorganic material, are stacked one on another.

In an embodiment, the organic layer 173 may include or be made ofacrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxyresin, urethane resin, cellulose resin, or perylene resin.

However, the structure of the encapsulation layer 170 is not limited tothe above example and may be variously modified.

The color conversion substrate 30 will now be described in detail withreference to FIGS. 15 through 19 in addition to FIGS. 1 through 14.

FIG. 15 is a plan view illustrating the schematic arrangement of a thirdcolor filter 235 and the color pattern 250 in the color conversionsubstrate 30 of the display device 1 according to an embodiment. FIG. 16is a plan view illustrating the schematic arrangement of the lightblocking pattern 260 in the color conversion substrate 30 of the displaydevice 1 according to an embodiment. FIG. 17 is a plan view illustratingthe schematic arrangement of a first color filter 231 in the colorconversion substrate 30 of the display device 1 according to anembodiment. FIG. 18 is a plan view illustrating the schematicarrangement of a second color filter 233 in the color conversionsubstrate 30 of the display device 1 according to an embodiment. FIG. 19is a plan view illustrating the schematic arrangement of the bankpattern 370, a first wavelength conversion pattern 340, a secondwavelength conversion pattern 350, and a light transmission pattern 330in the color conversion substrate 30 of the display device 1 accordingto an embodiment.

A second base 310 of the color conversion substrate 30 illustrated inFIGS. 9, 12 and 13 may include or be made of a light transmittingmaterial.

In an embodiment, the second base 310 may include a glass substrate or aplastic substrate. In an embodiment, the second base 310 may furtherinclude a separate layer located on the glass substrate or the plasticsubstrate, for example, an insulating layer such as an inorganic layer.

In an embodiment, the light transmitting regions TA1 through TA3 and thelight blocking region BA may be defined in the second base 310 asdescribed above.

As illustrated in FIGS. 9, 12 and 13, the third color filter 235 and thecolor pattern 250 may be located on a surface of the second base 310which faces the display substrate 10.

The third color filter 235 may overlap the third light emitting regionLA3 or the third light transmitting region TA3.

The third color filter 235 may transmit only light of the third color(e.g., blue light) and block or absorb light of the first color (e.g.,red light) and light of the second color (e.g., green light). In anembodiment, the third color filter 235 may be a blue color filter andmay include a blue colorant such as a blue dye or a blue pigment. Asused herein, the term ‘colorant’ is a concept encompassing both a dyeand a pigment.

The color pattern 250 may overlap the non-light emitting region NLA orthe light blocking region BA. In an embodiment, the color pattern 250may be further located in the non-display area NDA.

The color pattern 250 may absorb a part of light introduced from theoutside of the display device 1 into the display device 1, therebyreducing reflected light due to external light. If a considerable partof external light is reflected, distortion of the color gamut of thedisplay device 1 may occur. In an embodiment, the color pattern 250 islocated in the non-light emitting region NLA and the non-display areaNDA, such that color distortion due to reflection of external light maybe substantially reduced.

In an embodiment, the color pattern 250 may include a blue colorant suchas a blue dye or a blue pigment. In an embodiment, the color pattern 250may include or be made of the same material as the third color filter235 and may be formed simultaneously with the third color filter 235during a same process. In an embodiment where the color pattern 250includes a blue colorant, external light or reflected light transmittedthrough the color pattern 250 may be blue light. A user's eye colorsensibility varies according to the color of light. More specifically,light of a blue wavelength band may be perceived less sensitively by auser than light of a green wavelength band and light of a red wavelengthband. Therefore, in such an embodiment where the color pattern 250includes a blue colorant, a user may perceive reflected light relativelyless sensitively.

In an embodiment, as illustrated in FIG. 15, the color pattern 250 maybe disposed over the entire light blocking region BA. In an embodiment,as illustrated in FIG. 15, the color pattern 250 and the third colorfiler 235 may be connected to each other, or the color pattern 250 andthe third color filer 235 may be integrally formed as a single unitaryunit.

In an embodiment, as illustrated in FIGS. 9, 12 and 13, the lightblocking pattern 260 may be located on the surface of the second base310 which faces the display substrate 10. The light blocking pattern 260may overlap the light blocking region BA to block transmission of light.In an embodiment, the light blocking pattern 260 may be disposed in asubstantially lattice shape in a plan view in the third direction Z asillustrated in FIG. 16.

In an embodiment, the light blocking pattern 260 may include an organiclight blocking material and may be formed by coating and exposing theorganic light blocking material.

As described above, external light may cause distortion of the colorgamut of the display device 1. In an embodiment, the light blockingpattern 260 is located on the second base 310, such that at least a partof the external light is absorbed by the light blocking pattern 260.Therefore, color distortion due to reflection of external light may bereduced. In an embodiment, the light blocking pattern 260 may preventcolor mixing due to intrusion of light between adjacent lighttransmitting regions, thereby further improving the color gamut.

In an embodiment, the light blocking pattern 260 may be located on thecolor pattern 250. In such an embodiment, the light blocking pattern 260may be located opposite the second base 310 with the color pattern 250interposed between them.

In an embodiment where the color pattern 250 is located between thelight blocking pattern 260 and the second base 310, the light blockingpattern 260 may not contact the second base 310.

In an alternative embodiment, the light blocking pattern 260 may beomitted.

In an embodiment, as illustrated in FIG. 9, the first color filter 231and the second color filter 233 may be located on the surface of thesecond base 310 which faces the display substrate 10.

The first color filter 231 may overlap the first light emitting regionLA1 or the first light transmitting region TA1, and the second colorfilter 233 may overlap the second light emitting region LA2 or thesecond light transmitting region TA2.

In an embodiment, the first color filter 231 may block or absorb lightof the third color (e.g., blue light). That is, the first color filter231 may function as a blue light blocking filter that blocks blue light.In an embodiment, the first color filter 231 may transmit only light ofthe first color (e.g., red light) and block or absorb light of the thirdcolor (e.g., blue light) and block or absorb light of the second color(e.g., green light). In one embodiment, for example, the first colorfilter 231 may be a red color filter and may include a red colorant.

The second color filter 233 may block or absorb light of the third color(e.g., blue light). That is, the second color filter 233 may alsofunction as a blue light blocking filter. In an embodiment, the secondcolor filter 233 may transmit only light of the second color (e.g.,green light) and block or absorb light of the third color (e.g., bluelight) and light of the first color (e.g., red light). In oneembodiment, for example, the second color filter 233 may be a greencolor filter and may include a green colorant.

In an embodiment, a part of the first color filter 231 may be furtherlocated in the light blocking region BA as illustrated in FIGS. 9 and17, and a part of the second color filter 233 may also be furtherlocated in the light blocking region BA as illustrated in FIGS. 9 and18.

In an embodiment, a part of the first color filter 231 may be furtherlocated in the blocking region BA between the first light transmittingregion TA1 and the second light transmitting region TA2 and between thefirst light transmitting region TA1 and the third light transmittingregion TA3.

In an embodiment, a part of the second color filter 233 may be furtherlocated in the light blocking region BA between the first transmittingregion TA1 and the second light transmitting region TA2 and between thesecond light transmitting region TA2 and the third light transmittingregion TA3.

In such an embodiment, the first color filter 231 and the second colorfilter 233 overlap each other, and the first color filter 231 and thesecond color filter 233 may also overlap each other in the lightblocking region BA between the first light transmitting region TA1 andthe second light transmitting region TA2. A part of the light blockingregion BA, in which the first color filter 231 and the second colorfilter 233 overlap each other, may function as a light blocking memberthat blocks transmission of light.

In an alternative embodiment, the first color filter 231 and the secondcolor filter 233 may be located over the entire light blocking region BAand may overlap each other in the entire light blocking region BA.

In an embodiment, the first color filter 231 and the second color filter233 may overlap the color pattern 250 in the light blocking region BA.In one embodiment, for example, the color pattern 250 may overlap thefirst color filter 231 and the second color filter 233 in the lightblocking region BA between the first light transmitting region TA1 andthe second light transmitting region TA2. In such an embodiment, thecolor pattern 250 may overlap the second color filter 233 in the lightblocking region BA between the second light transmitting region TA2 andthe third light transmitting region TA3. In such an embodiment, thecolor pattern 250 may overlap the first color filter 231 in the lightblocking region BA between the third light transmitting region TA3 andthe first light transmitting region TA1.

In the light blocking region BA, a part where the first color filter 231and the color pattern 250 overlap and a part where the second colorfilter 233 and the color pattern 250 overlap may function as lightblocking members. In the light blocking region BA, the part where thefirst color filter 231 and the color pattern 250 overlap and the partwhere the second color filter 233 and the color pattern 250 overlap mayabsorb at least a part of external light, thereby reducing colordistortion due to reflection of the external light. In addition, lightemitted to the outside may be prevented from intruding between adjacentlight emitting regions and thus causing color mixing. Accordingly, thecolor gamut of the display device 1 can be further improved.

In an embodiment, at least one selected from the first color filter 231and the second color filter 233 may be further located in thenon-display area NDA. In one embodiment, for example, as illustrated inFIGS. 12 and 13, the first color filter 231 may be further located inthe non-display area NDA and may overlap the color pattern 250 in thenon-display area NDA. The color pattern 250 and the first color filter231 overlapping each other may function as light blocking members in thenon-display area NDA. In an embodiment where the light blocking pattern260 is omitted, the first color filter 231 may be located directly onthe color pattern 250 in the non-display area NDA.

In an embodiment, as illustrated in FIGS. 9, 12 and 13, a second cappinglayer 391 may be located on the surface of the second base 310 to coverthe light blocking pattern 260, the color pattern 250, the first colorfilter 231, the second color filter 233, and the third color filter 235.In an embodiment, the second capping layer 391 may directly contact thefirst color filter 231, the second color filter 233, and the third colorfilter 235. In an embodiment, the second capping layer 391 may directlycontact the light blocking pattern 260.

The second capping layer 391 may prevent impurities such as moisture orair from being introduced from the outside and damaging or contaminatingthe light blocking pattern 260, the color pattern 250, the first colorfilter 231, the second color filter 233, and the third color filter 235.In addition, the second capping layer 391 may prevent the colorantscontained in the first color filter 231, the second color filter 233 andthe third color filter 235 from being diffused to other elements such asthe first wavelength conversion pattern 340 and the second wavelengthconversion pattern 350. In an embodiment, the second capping layer 391may include or be made of an inorganic material. In one embodiment, forexample, the second capping layer 391 may include silicon nitride,aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride,tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tinoxide, cerium oxide, or silicon oxynitride.

In an embodiment, the second capping layer 391 may cover side surfacesof the color pattern 250, the light blocking pattern 260, and the firstcolor filter 231 in the non-display area NDA. In an embodiment, thesecond capping layer 391 may directly contact the second base 310 in thenon-display area NDA.

The bank pattern 370 may be located on a surface of the second cappinglayer 391 which faces the display substrate 10. In an embodiment, thebank pattern 370 may be located directly on the surface of the secondcapping layer 391 and may directly contact the second capping layer 391.

In an embodiment, the bank pattern 370 may overlap the non-lightemitting region NLA or the light blocking region BA. In an embodiment,the bank pattern 370 may surround the first light transmitting regionTA1, the second light transmitting region TA2, and the third lighttransmitting region TA3 in a plan view in the third direction Z asillustrated in FIG. 19. The bank pattern 370 may separate spaces inwhich the first wavelength conversion pattern 340, the second wavelengthconversion pattern 350, and the light transmission pattern 330 aredisposed.

In an embodiment, the bank pattern 370 may be formed as a integrallyconnected single pattern as illustrated in FIG. 19, but the disclosureis not limited thereto. In an alternative embodiment, a part of the bankpattern 370 which surrounds the first light transmitting region TA1, apart of the bank pattern 370 which surrounds the second lighttransmitting region TA2, and a part of the bank pattern 370 whichsurrounds the third light transmitting region TA3 may be formed asindividual patterns separated from each other.

In an embodiment, the first wavelength conversion pattern 340, thesecond wavelength conversion pattern 350, and the light transmissionpattern 330 are formed by a method of ejecting an ink composition usinga nozzle, that is, an inkjet printing method, and the bank pattern 370may serve as a guide that stably positions the ejected ink compositionat a desired position. In such an embodiment, the bank pattern 370 mayfunction as a barrier rib.

In an embodiment, the bank pattern 370 may overlap the pixel defininglayer 150.

As illustrated in FIGS. 12 and 13, in an embodiment, the bank pattern370 may be further located in the non-display area NDA. The bank pattern370 may overlap the color pattern 250 and the first color filter 231 inthe non-display area NDA.

In an embodiment, the bank pattern 370 may include an organic materialhaving photocurability. In an embodiment, the bank pattern 370 mayinclude an organic material having photocurability and including a lightblocking material. In such an embodiment where the bank pattern 370 haslight blocking properties, the bank pattern 370 may prevent light fromintruding between neighboring light emitting regions in the display areaDA. In one embodiment, for example, the bank pattern 370 may block theoutput light LE emitted from the second light emitting element ED2 fromentering the first wavelength conversion pattern 340 overlapping thefirst light emitting region LA1. In such an embodiment, the bank pattern370 may block or prevent external light from entering elements locatedunder the bank pattern 370 in the non-light emitting region NLA and thenon-display area NDA.

In an embodiment, as illustrated in FIGS. 9, 12 and 13, the firstwavelength conversion pattern 340, the second wavelength conversionpattern 350, and the light transmission pattern 330 may be located onthe second capping layer 391. In an embodiment, the first wavelengthconversion pattern 340, the second wavelength conversion pattern 350,and the light transmission pattern 330 may be located in the displayarea DA.

The light transmission pattern 330 may overlap the third light emittingregion LA3 or the third light emitting element ED3. The lighttransmission pattern 330 may be located in a space defined by the bankpattern 370 in the third light transmitting region TA3.

In an embodiment, the light transmission pattern 330 may be formed as anisland-shaped pattern as illustrated in FIG. 19. In such an embodiment,the light transmission pattern 330 may not overlap the light blockingregion BA as shown in FIG. 19, but not being limited thereto. In analternative embodiment, a part of the light transmission pattern 330 mayoverlap the light blocking region BA.

The light transmission pattern 330 may transmit incident light. Theoutput light LE provided by the third light emitting element ED3 may beblue light as described above. The output light LE which is blue lightis transmitted through the light transmission pattern 330 and the thirdcolor filter 235 and then emitted to the outside of the display device1. That is, third light L03 emitted out of the display device 1 throughthe third light emitting region LA3 may be blue light.

In an embodiment, the light transmission pattern 330 may include a firstbase resin 331 and may further include a first scatterer 333 dispersedin the first base resin 331.

The first base resin 331 may include or be made of a material havinghigh light transmittance. In an embodiment, the first base resin 331 mayinclude or be made of an organic material. In one embodiment, forexample, the first base resin 331 may include an organic material suchas epoxy resin, acrylic resin, cardo resin, or imide resin.

The first scatterer 333 may have a refractive index different from thatof the first base resin 331 and may form an optical interface with thefirst base resin 331. In one embodiment, for example, the firstscatterer 333 may be light scattering particles. The first scatterer 333is not particularly limited as long as it is a material that can scatterat least a part of transmitted light. In one embodiment, for example,the first scatterer 333 may be metal oxide particles or organicparticles. In such an embodiment, the metal oxide particles may includeat least one selected from titanium oxide (TiO₂), zirconium oxide(ZrO₂), aluminum oxide (Al₂O₃), indium oxide (In₂O₃), zinc oxide (ZnO),and tin oxide (SnO₂). In such an embodiment, the organic particles mayinclude at least one selected from acrylic resin and urethane resin. Thefirst scatterer 333 may scatter incident light in random directionsregardless of the incident direction of the incident light withoutsubstantially changing the wavelength of the light transmitted throughthe light transmission pattern 330.

In an embodiment, the light transmission pattern 330 may directlycontact the second capping layer 391 and the bank pattern 370.

The first wavelength conversion pattern 340 may be located on the secondcapping layer 391 and may overlap the first light emitting region LA1 orthe first light emitting element ED1 or the first light transmittingregion TA1.

In an embodiment, the first wavelength conversion pattern 340 may belocated in a space defined by the bank pattern 370 in the first lighttransmitting region TA1.

In an embodiment, the first wavelength conversion pattern 340 may beformed as an island-shaped pattern as illustrated in FIG. 19. In anembodiment, the first wavelength conversion pattern 340 may not overlapthe light blocking region BA as shown in FIG. 19, but not being limitedthereto. In an embodiment, a part of the first wavelength conversionpattern 340 may overlap the light blocking region BA.

In an embodiment, the first wavelength conversion pattern 340 maydirectly contact the second capping layer 391 and the bank pattern 370.

The first wavelength conversion pattern 340 may convert or shift a peakwavelength of incident light into another specific peak wavelength andoutput light having the converted or shifted specific peak wavelength.In an embodiment, the first wavelength conversion pattern 340 mayconvert the output light LE provided by the first light emitting elementED1 into red light having a peak wavelength in a range of about 610 nmto about 650 nm and output the red light.

In an embodiment, the first wavelength conversion pattern 340 mayinclude a second base resin 341 and a first wavelength shifter 345dispersed in the second base resin 341 and may further include a secondscatterer 343 dispersed in the second base resin 341.

The second base resin 341 may include or be made of a material havinghigh light transmittance. In an embodiment, the second base resin 341may include or be made of an organic material, in an embodiment, thesecond base resin 341 may include or be made of the same material as thefirst base resin 331 or may include at least one selected from thematerials listed above for the first base resin 331.

The first wavelength shifter 345 may convert or shift a peak wavelengthof incident light to another specific peak wavelength. In an embodiment,the first wavelength shifter 345 may convert the output light LE of thethird color, which is blue light provided by the first light emittingelement ED1, into red light having a single peak wavelength in a rangeof about 610 nm to about 650 nm and output the red light.

Examples of the first wavelength shifter 345 may include quantum dots,quantum rods, and phosphors. In one embodiment, for example, the quantumdots may be particulate materials that emit light of a specific colorwhen electrons transit from a conduction band to a valence band.

The quantum dots may be semiconductor nanocrystalline materials. Thequantum dots may have a specific band gap according to their compositionand size. Thus, the quantum dots may absorb light and then emit lighthaving a unique wavelength. Examples of semiconductor nanocrystals ofthe quantum dots include group IV nanocrystals, group II-VI compoundnanocrystals, group III-V compound nanocrystals, group IV-VInanocrystals, and combinations of the same.

The group II-VI compounds may be selected from binary compounds selectedfrom CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS andmixtures of the same; ternary compounds selected from InZnP, AgInS,CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe,CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe,MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selectedfrom HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe,HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

The group III-V compounds may be selected from binary compounds selectedfrom GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSband mixtures of the same; ternary compounds selected from GaNP, GaNAs,GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP,InAIP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof andquaternary compounds selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb,GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb,InAlPAs, InAlPSb and mixtures thereof.

The group IV-VI compounds may be selected from binary compounds selectedfrom SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof ternarycompounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe,SnPbS, SnPbSe, SnPbTe and mixtures of the same; and quaternary compoundsselected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The groupIV elements may be selected from silicon (Si), germanium (Ge), and amixture thereof. The group IV compounds may be binary compounds selectedfrom silicon carbide (SiC), silicon germanium (SiGe), and a mixturethereof.

Here, the binary, ternary or quaternary compounds may be in theparticles at a uniform concentration or may be in the same particles atpartially different concentrations. In addition, the quantum dots mayhave a core/shell structure in which one quantum dot surrounds anotherquantum dot. An interface between the core and the shell may have aconcentration gradient in which the concentration of an element in theshell is reduced toward the center.

In an embodiment, the quantum dots may have a core-shell structureincluding a core containing the above-described nanocrystal and a shellsurrounding the core. The shell of each quantum dot may serve as aprotective layer for maintaining semiconductor characteristics bypreventing chemical denaturation of the core and/or as a charging layerfor giving electrophoretic characteristics to the quantum dot. The shellmay be a single layer or a multilayer. An interface between the core andthe shell may have a concentration gradient in which the concentrationof an element in the shell is reduced toward the center. The shell ofeach quantum dot may be, for example, a metal or non-metal oxide, asemiconductor compound, or a combination thereof.

In one embodiment, for example, the metal or non-metal oxide may be, butis not limited to, a binary compound such as SiO₂, Al₂O₃, TiO₂, ZnO,MnO, Mn₂O₃, Mn₃O₄, CuO, FeO, Fe₂O₃, Fe₃O₄, CoO, Co₃O₄ or NiO or aternary compound such as MgAl₂O₄, CoFe₂O₄, NiFe₂O₄ or CoMn₂O₄.

In such an embodiment, the semiconductor compound may be, but is notlimited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP,GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, or AlSb.

Light emitted from the first wavelength shifter 345 may have a fullwidth of half maximum (“FWHM”) of an emission wavelength spectrum ofabout 45 nm or less, about 40 nm or less, or about 30 nm or less.Therefore, the color purity and color reproducibility of the displaydevice 1 can be improved. In addition, the light emitted from the firstwavelength shifter 345 may be radiated in various directions regardlessof the incident direction of incident light. Therefore, the lateralvisibility of the first color displayed in the first light transmittingregion TA1 may be improved.

A part of the output light LE provided by the first light emittingelement ED1 may be transmitted through the first wavelength conversionpattern 340 without being converted into red light by the firstwavelength shifter 345. A component of the output light LE incident onthe first color filter 231 without being converted by the firstwavelength conversion pattern 340 may be blocked by the first colorfilter 231, and red light, into which the output light LE has beenconverted by the first wavelength conversion pattern 340, may betransmitted through the first color filter 231 and emitted to theoutside. That is, first light L01 emitted out of the display device 1through the first light transmitting region TA1 may be red light.

The second scatterer 343 may have a refractive index different from thatof the second base resin 341 and may form an optical interface with thesecond base resin 341. In one embodiment, for example, the secondscatterer 343 may be light scattering particles. Other features of thesecond scatterer 343 are substantially the same or similar to those ofthe first scatterer 333, and thus any repetitive detailed descriptionthereof will be omitted.

The second wavelength conversion pattern 350 may be located in a spacedefined by the bank pattern 370 in the second light transmitting regionTA2.

In an embodiment, the second wavelength conversion pattern 350 may beformed as an island-shaped pattern as illustrated in FIG. 19. In analternative embodiment, a part of the second wavelength conversionpattern 350 may overlap the light blocking region BA.

In an embodiment, the second wavelength conversion pattern 350 maydirectly contact the second capping layer 391 and the bank pattern 370.

The second wavelength conversion pattern 350 may convert or shift a peakwavelength of incident light into another specific peak wavelength andoutput light having the converted or shifted specific peak wavelength.In an embodiment, the second wavelength conversion pattern 350 mayconvert the output light LE provided by the second light emittingelement ED2 into green light in a range of about 510 nm to about 550 nmand output the green light.

In an embodiment, the second wavelength conversion pattern 350 mayinclude a third base resin 351 and a second wavelength shifter 355dispersed in the third base resin 351 and may further include a thirdscatterer 353 dispersed in the third base resin 351.

The third base resin 351 may include or be made of a material havinghigh light transmittance. In an embodiment, the third base resin 351 mayinclude or be made of an organic material. In an embodiment, the thirdbase resin 351 may include or be made of the same material as the firstbase resin 331 or may include at least one selected from the materialslisted above for the first base resin 331.

The second wavelength shifter 355 may convert or shift a peak wavelengthof incident light to another specific peak wavelength. In an embodiment,the second. wavelength shifter 355 may convert blue light having a peakwavelength in a range of about 440 nm to about 480 nm into green lighthaving a peak wavelength in a range of about 510 nm to about 550 nm.

Examples of the second wavelength shifter 355 may include quantum dots,quantum rods, and phosphors. The second wavelength shifter 355 issubstantially the same or similar to the first wavelength shifter 345described above, and thus any repetitive detailed description thereofwill be omitted.

In an embodiment, both the first wavelength shifter 345 and the secondwavelength shifter 355 may include or be composed of quantum dots. Insuch an embodiment, the particle size of quantum dots constituting thesecond wavelength shifter 355 may be smaller than that of quantum dotsconstituting the first wavelength shifter 345.

The third scatterer 353 may have a refractive index different from thatof the third base resin 351 and may form an optical interface with thethird base resin 351. In one embodiment, for example, the thirdscatterer 353 may be light scattering particles, Other features of thethird scatterer 353 are substantially the same or similar to those ofthe second scatterer 343, and thus any repetitive detailed descriptionthereof will be omitted.

The output light LE emitted from the second light emitting element ED2may be provided to the second wavelength conversion pattern 350, and thesecond wavelength shifter 355 may convert the output light LE providedby the second light emitting element ED2 into green light having a peakwavelength in a range of about 510 nm to about 550 nm and emit the greenlight.

A part of the output light LE which is blue light may be transmittedthrough the second wavelength conversion pattern 350 without beingconverted into green light by the second wavelength shifter 355 and maybe blocked by the second color filter 233, and green light, into whichthe output light LE has been converted by the second wavelengthconversion pattern 350, may be transmitted through the second colorfilter 233 and emitted to the outside. Accordingly, second light L02emitted out of the display device 1 through the second lighttransmitting region TA2 may be green light.

A third capping layer 393 may be located on the bank pattern 370, thelight transmission pattern 330, the first wavelength conversion pattern340, and the second wavelength conversion pattern 350. The third cappinglayer 393 may cover the light transmission pattern 330, the firstwavelength conversion pattern 340, and the second wavelength conversionpattern 350. In an embodiment, the third capping layer 393 may also belocated in the non-display area NDA. In the non-display area NDA (seeFIG. 1), the third capping layer 393 may directly contact the secondcapping layer 391 and seal the light transmission pattern 330, the firstwavelength conversion pattern 340, and the second wavelength conversionpattern 350. Accordingly, impurities such as moisture or air may beeffectively prevented from being introduced from the outside anddamaging or contaminating the light transmission pattern 330, the firstwavelength conversion pattern 340 and the second wavelength conversionpattern 350.

In an embodiment, the third capping layer 393 may cover an outer surfaceof the bank pattern 370 in the non-display area NDA. In an embodiment,the third capping layer 393 may directly contact the second cappinglayer 391 in the non-display area NDA.

In an embodiment, the third capping layer 393 may include or be made ofan inorganic material. In an embodiment, the third capping layer 393 mayinclude or be made of the same material as the second capping layer 391or may include at least one selected from the materials mentioned in thedescription of the second capping layer 391. In an embodiment where boththe second capping layer 391 and the third capping layer 393 includes orare made of an inorganic material, both the second capping layer 391 andthe third capping layer 393 may directly contact each other in thenon-display area NDA to form an inorganic-inorganic bond.

In an embodiment, as described above, the sealing member 50 may belocated between the color conversion substrate 30 and the displaysubstrate 10 in the non-display area NDA.

The sealing member 50 may overlap the encapsulation layer 170. In oneembodiment, for example, the sealing member 50 may overlap the lowerinorganic layer 171 and the upper inorganic layer 175 and may notoverlap the organic layer 173. In an embodiment, the sealing member 50may directly contact the encapsulation layer 170. In one embodiment, forexample, the sealing member 50 may be directly located on the upperinorganic layer 175 and may directly contact the upper inorganic layer175.

In an embodiment, the upper inorganic layer 175 and the lower inorganiclayer 171 located under the sealing member 50 may extend to the outsideof the sealing member 50, and an end of the upper inorganic layer 175and an end of the lower inorganic layer 171 may be located between thesealing member 50 and the first portion OS1 a of the first supportmember OS1 and between the sealing member 50 and the second portion OS1b of the first support member OS1.

The sealing member 50 may overlap the color pattern 250, the first colorfilter 231, and the bank pattern 370 in the non-display area NDA. In anembodiment, the sealing member 50 may directly contact the third cappinglayer 393 that covers the bank pattern 370.

The sealing member 50 may overlap the first gate metal WR1 including awiring connected to the connection pad PD and may also overlap thesecond gate metal WR2 including a part of the gate driving circuit. Insuch an embodiment where the sealing member 50 is disposed to overlapthe first gate metal WR1 and the second gate metal WR2, a width of thenon-display area NDA may be reduced.

The filler 70 may be located in the space between the color conversionsubstrate 30, the display substrate 10, and the sealing member 50 asdescribed above. In an embodiment, the filler 70 may directly contactthe third capping layer 393 and the upper inorganic layer 175 of theencapsulation layer 170 as illustrated in FIGS. 9, 12 and 13.

In embodiments of the display device according to the invention, a firstsupport member may not only support masks during a manufacturing processbut also function as a crack dam that prevents cracking of an inorganiclayer, thereby improving the reliability of the display device andreducing a defect rate in the manufacturing process. In suchembodiments, since a sealing member is disposed to overlap aencapsulation layer, space efficiency of a non-display area may beimproved.

FIG. 20 is a plan view of a display device 1′ separated from a mothersubstrate, on which side polishing has not been performed, according toan embodiment. FIG. 21 is a cross-sectional view taken along lineX31-X31′ of FIG. 20 showing the display device 1′ on which sidepolishing has not be performed. FIG. 22 is a cross-sectional view takenalong line X51-X51′ of FIG. 20 showing the display device 1′ on whichside polishing has not be performed.

Referring to FIGS. 20 through 22, an embodiment of the display device 1′separated from a mother substrate or a mother glass by cutting themother substrate or the mother glass along a scribing line SRL(hereinafter, referred to as an ‘unprocessed display device’) includesan unprocessed display substrate 10′, an unprocessed color conversionsubstrate 30′, a sealing member 50, and a filler 70. The unprocesseddisplay substrate 10′ may include not only a first support member OS1′located in a non-display area NDA but also a second support member OS2located outside of the first support member OS1′.

In an embodiment, the first support member OS1′ of the unprocesseddisplay device 1′ may include a first portion OS1 a' located adjacent toa first side L1 a of the unprocessed display device 1′ and a secondportion OS1 b′ disposed along a second side L2 a, a third side L3 a anda fourth side L4 a of the unprocessed display device 1′. A width of thefirst portion OS1 a′ in the first direction X may be greater than thatof the first portion OS1 a (see FIG. 2) illustrated in FIG. 2.

In an embodiment, the second support member OS2 of the unprocesseddisplay device 1′ may be located outside of the second portion OS1 b′ ofthe first support member OS1′. The second support member OS2 may bedisposed along the second side L2 a, the third side L3 a and the fourthside L4 a of the unprocessed display device 1′ and may be connected tothe first portion OS1 a′ of the first support member OS1′.

The first portion OS1 a′ includes a first lower support pattern OS11 a′and a first upper support pattern OS12 a′ located on the first lowersupport pattern OS11 a′, and the second portion OS1 b′ includes a secondlower support pattern OS11 b′ and a second upper support pattern OS12 b′located on the second lower support pattern OS11 b′ as described above.

The second support member OS2 may also include a lower support patternOS21 and an upper support pattern OS22. The first support member OS1′and the second support member OS2 may function as mask supports thatsupport masks (or open masks) used in the process of forming a lightemitting layer OL, a cathode CE, a first capping layer 160, a lowerinorganic layer 171 and an upper inorganic layer 175 of the unprocesseddisplay substrate 10′ in the state of the mother substrate or the motherglass.

The second support member OS2 and the second portion OS1 b′ of the firstsupport member OS1′ may be spaced apart from each other. Therefore, whena process of cutting the mother substrate along the scribing line SRL isperformed, the second support member OS2 may primarily absorb impacts.In an embodiment, since the second support member OS2 and the secondportion OS1 b′ of the first support member OS1′ are spaced apart fromeach other, the transmission of an impact, which is applied to thesecond support member OS2, to the first support member OS1′ may bereduced. Therefore, cracks may be effectively prevented from beinggenerated in the lower inorganic layer 171 and the upper inorganic layer175 due to external impacts during the process of cutting the mothersubstrate.

A side polishing process may be further performed on the unprocesseddisplay device 1′ separated from the mother substrate. The second sideL2 a, the third side L3 a and the fourth side L4 a of the unprocesseddisplay device 1′ may be polished up to a side polishing line SPLlocated relatively inward than the scribing line SRL. In the sidepolishing process, the unprocessed display substrate 10′ and theunprocessed color conversion substrate 30′ may be partially removed, andthe second support member OS2 may also be removed. In an embodiment, aportion of the first portion OS1 a′ of the first support member OS1′which faces the second side L2 a and the fourth side L4 a may beremoved, and a portion of the second portion OS1 b′ of the first supportmember OS1′ may be removed in the side polishing process. Therefore, awidth of the second portion OS1 b′ may be reduced in the side polishingprocess.

In such an embodiment, the side polishing process may not be performedon the first side L1 a of the unprocessed display device 1′.Alternatively, the side polishing process may be performed on the firstside L1 a of the unprocessed display device 1′ only up to a part outsideconnection pads PD. Therefore, the width of the first portion OS1 a′ ofthe first support member OS1′ may not be reduced. Accordingly, after theside polishing is completed, the width W1 a (see FIG. 12) of the firstportion OS1 a (see FIG. 12) may be greater than the width W1 b of thesecond portion OS1 b (see FIG. 13).

In an embodiment, a part of the color conversion substrate 30′ on thefirst side L1 a may be partially cut and removed along a cutting line CLbefore or after the side polishing process is performed. Through theabove process, the display device illustrated in FIGS. 2, 9, 12 and 13may be manufactured.

In an embodiment of the display device, as described above, a width of anon-display area may be relatively reduced because a side polishingprocess is performed on the display device after the display device isseparated from a mother substrate in a manufacturing process. In such anembodiment, since support members that support a mask are spaced apartfrom each other in the state of the mother substrate, the transmissionof an impact, which may be generated in a cutting process for separatingthe display device, into the display device may be effectively preventedor minimized. In such an embodiment, even if a part of an inorganiclayer (e.g., a first lower inorganic layer and a first upper inorganiclayer) is partially deposited on a first support member due to maskmisalignment in the manufacturing process, an external impact generatedin the cutting process may be absorbed by a second support member. Insuch an embodiment, since the second support member and the firstsupport member are spaced apart from each other, the impact absorbed bythe second support member may not be transmitted to the first supportmember. Accordingly, the generation of cracks in the inorganic layer dueto the cutting process may be effectively prevented or minimized. Insuch an embodiment, since an impact generated in the side polishingprocess is absorbed by the first support member, the transmission of theimpact to the inorganic layer due to the side polishing process can bereduced or prevented.

FIG. 23 is a plan view of a display device 1-1 according to anembodiment. FIG. 24 is a cross-sectional view taken along line X32-X32′of the display device 1-1 of FIG. 23. FIG. 25 is a cross-sectional viewtaken along line X52-X52′ of the display device 1-1 of FIG. 23.

The display device 1-1 shown in FIGS. 23 to 25 is substantially the sameor similar to the embodiment illustrated in FIGS. 2, 9, 12 and 13 exceptthat a display substrate 10-1 includes a first support member OS1-1 anda second support member OS2-1. The same or like elements shown in FIGS.23 to 25 have been labeled with the same reference characters as usedabove to describe the embodiment illustrated in FIGS. 2, 9, 12 and 13,and any repetitive detailed description thereof will hereinafter beomitted or simplified.

The first support member OS1-1 may be located outside of a sealingmember 50 and may surround the sealing member 50. In an embodiment, thefirst support member OS1-1 may be substantially aligned with a secondside L2, a third side L3 and a fourth side L4 of the display device 1-1and may be spaced apart from a first side L1 of the display device 1-1.

The first support member OS1-1 may include a first lower support patternOS1-11 located on a second insulating layer 117 and a first uppersupport pattern OS1-12 located on the first lower support patternOS1-11.

The second support member OS2-1 may be located between the first supportmember OS1-1 and connection pads PD or between the first support memberOS1-1 and a pad area PDA. The second support member OS2-1 may be spacedapart from the first support member OS1-1. The second support memberOS2-1 may be located only on the first side L1 of the display device1-1. In one embodiment, for example, the second support member OS2-1 mayinclude only a part extending in the first direction X and may notinclude a part extending in the second direction Y. In such anembodiment, the second support member OS2-1 may not be located betweenthe second side L2, the third side L3 and the fourth side L4 of thedisplay device 1-1 and the first support member OS1-1.

The second support member OS2-1 may include a second lower supportpattern OS2-11 located on the second insulating layer 117 and a secondupper support pattern OS2-12 located on the second lower support patternOS2-11.

In an embodiment, the first lower support pattern OS1-11 and the secondlower support pattern OS2-11 may include or be made of the same materialas a third insulating layer 130 and may be formed simultaneously withthe third insulating layer 130 during a same process.

In an embodiment, the first upper support pattern OS1-12 and the secondupper support pattern OS2-12 may include or be made of the same materialas a pixel defining layer 150 and may be formed simultaneously with thepixel defining layer 150 during a same process.

FIG. 26 is a plan view of a display device 1-1′ separated from a mothersubstrate, t on which side polishing has not been performed, accordingto an embodiment.

Referring to FIG. 26, the display device 1-1′ (hereinafter, referred toas an ‘unprocessed display device’) separated from a mother substrate ora mother glass by cutting the mother substrate or the mother glass alonga scribing line SRL may include not only a first support member OS1-1′located in a non-display area NDA but also a second support memberOS2-1′ located outside of the first support member OS1-1′.

The second support member OS2-1′ may be disposed along a first side L1a, a second side L2 a, a third side L3 a and a fourth side L4 a of theunprocessed display device 1-1′, may be spaced apart from the firstsupport member OS1-1′, and may completely surround the first supportmember OS1-1′.

A side polishing process may be further performed on the unprocesseddisplay device 1-1′ separated from the mother substrate along thescribing line SRL. The second side L2 a, the third side L3 a and thefourth side L4 a of the unprocessed display device 1-1′ may be polishedup to a side polishing line SPL located relatively inward than thescribing line SRL. In the side polishing process, a part of the secondsupport member OS2-1′ which is disposed along the second side L2 a, thethird side L3 a and the fourth side L4 a may be removed, and a part ofthe second support member OS2-1′ which is disposed along the first sideL1 a may remain to form the second support member OS2-1 (see FIG. 23)illustrated in FIG. 23.

In an embodiment, a part of the first support member OS1-1′ which isdisposed along the second side L2 a, the third side L3 a, and the fourthside L4 a may also be polished and removed in the side polishingprocess.

Through the above process, the display device illustrated in FIG. 23 maybe manufactured.

FIG. 27 is a plan view of a display device 1-2 according to anembodiment. FIG. 28 is a cross-sectional view taken along line X33-X33′of the display device 1-2 of FIG. 27. FIG. 29 is a cross-sectional viewtaken along line X53-X53′ of the display device 1-2 of FIG. 27.

The display device 1-shown in FIGS. 27 to 29 is substantially the sameas the embodiment illustrated in FIGS. 23 to 25 except that a displaysubstrate 10-2 includes a third support member OS3-1. The same or likeelements shown in FIGS. 27 to 29 have been labeled with the samereference characters as used above to describe the embodimentillustrated in FIGS. 23 to 25, and any repetitive detailed descriptionthereof will hereinafter be omitted or simplified.

The third support member OS3-1 may be located between a second supportmember OS2-1 and connection pads PD or between the second support memberOS2-1 and a pad area PDA. The third support member OS3-1 may be spacedapart from the second support member OS2-1. The second support memberOS2-1 and the third support member OS3-1 may be located only on a firstside L1 of the display device 1-2.

The third support member OS3-1 may include a third lower support patternOS3-11 located on a second insulating layer 117 and a third uppersupport pattern OS3-12 located on the third lower support patternOS3-11.

In an embodiment, the third lower support pattern OS3-11 may include orbe made of the same material as a third insulating layer 130 and may beformed simultaneously with the third insulating layer 130 during a sameprocess. In such an embodiment, the third upper support pattern OS3-12may include or be made of the same material as a pixel defining layer150 and may be formed simultaneously with the pixel defining layer 150during a same process.

FIG. 30 is a plan view of a display device 1-2′ according to anembodiment separated from a mother substrate, more specifically, a planview of a display device 1-2′ according to an embodiment on which sidepolishing has not been performed.

The display device 1-2′ separated from a mother substrate or a motherglass by cutting the mother substrate or the mother glass along ascribing line SRL shown in FIG. 30 (hereinafter, referred to as an‘unprocessed display device’) is substantially the same as theembodiment of FIG. 26 except that the unprocessed display device 1-2′further includes a third support member OS3-1′ located outside of asecond support member OS2-1′. The same or like elements shown in FIG. 30have been labeled with the same reference characters as used above todescribe the embodiment illustrated in FIG. 26, and any repetitivedetailed description thereof will hereinafter be omitted or simplified.

In such an embodiment, the third support member OS3-1′ may be disposedalong a first side L1 a, a second side L2 a, a third side L3 a and afourth side L4 a of the unprocessed display device 1-2′, may be spacedapart from the second support member OS2-1′, and may completely surroundthe second support member OS2-1′.

A side polishing process may be further performed on the unprocesseddisplay device 1-2′ separated from the mother substrate along thescribing line SRL. The second side L2 a, the third side L3 a and thefourth side L4 a of the unprocessed display device 1-2′ may be polishedup to a side polishing line SPL located relatively further in than thescribing line SRL. In the side polishing process, a part of the secondsupport member OS2-1′ which is disposed along the second side L2 a, thethird side L3 a and the fourth side L4 a and a part of the third supportmember OS3-1′ which is disposed along the second side L2 a, the thirdside L3 a and the fourth side L4 a may be removed. A part of the secondsupport member OS2-1′ which is disposed along the first side L1 a mayremain to form the second support member OS2-1 (see FIG. 27) illustratedin FIG. 27, and a part of the third support member OS3-1′ which isdisposed along the first side L1 a may remain to form the third supportmember OS3-1 (see FIG. 27) illustrated in FIG. 27.

Through the above process, the display device illustrated in FIGS. 27through 29 may be manufactured.

FIG. 31 is a plan view of a display device 1-3 according to anembodiment. FIG. 32 is a cross-sectional view taken along line X34-X34′of the display device 1-3 of FIG. 31. FIG. 33 is a cross-sectional viewtaken along line X54-X54′ of the display device 1-3 of FIG. 31.

Referring to FIGS. 31 to 33, an embodiment of the display device 1-3according to the current embodiment includes a display substrate 10-3, acolor conversion substrate 30-1, a sealing member 51, and a filler 70.The display device 1-3 shown in FIGS. 31 to 33 is substantially the sameor similar to the embodiment illustrated in FIGS. 2, 9, 12 and 13 exceptthat the display device 1-3 includes the sealing member 51, and thedisplay substrate 10-3 includes a first support member OS1-3. The sameor like elements shown in FIGS. 31 to 33 have been labeled with the samereference characters as used above to describe the embodimentillustrated in FIGS. 2, 9, 12 and 13. 26, and any repetitive detaileddescription thereof will hereinafter be omitted or simplified.

In such an embodiment, the sealing member 51 surrounds a dam member DM.The sealing member 51 includes a first portion 51 a disposed along afirst side L11 of the display device 1-3 and a second portion 51 bconnected to the first portion 51 a and disposed along a second sideL21, a third side L31 and a fourth side L41 of the display device 1-3.

In an embodiment, the second portion 51 b of the sealing member 51 maybe substantially aligned with the second side L21, the third side L31and the fourth side L41 of the display device 1-3. In one embodiment,for example, as illustrated in FIGS. 32 and 33, the second portion 51 bof the sealing member 51 may be aligned with edges of the colorconversion substrate 30-1 and edges of the display substrate 10-3.

In an embodiment, the first portion 51 a of the sealing member 51 may bespaced apart from the first side L11 of the display device 1-3.

In an embodiment, a width WSa of the first portion 51 a of the sealingmember 51 may be greater than a width WSb of the second portion 51 b ofthe sealing member 51.

The first support member OS1-3 may be located between the first portion51 a of the sealing member 51 and connection pads PD. The first supportmember OS1-3 may be located only on the first side L11 of the displaydevice 1-3. In such an embodiment, the first support member OS1-3 maynot be located between the second side L21, the third side L31 and thefourth side L41 of the display device 1-3 and the second portion 51 b ofthe sealing member 51.

The first support member OS1-3 may include a first lower support patternOS1-31 located on a second insulating layer 117 and a first uppersupport pattern OS1-32 located on the first lower support patternOS1-31.

In an embodiment, the first lower support pattern OS1-31 may include orbe made of the same material as a third insulating layer 130, and thefirst upper support pattern OS1-32 may include or be made of the samematerial as a pixel defining layer 150 and may be formed simultaneouslywith the pixel defining layer 150 during a same process.

In such an embodiment, the display device 1-3 may be manufactured bysetting the side polishing line SPL in the unprocessed display device 1′(see FIG. 20) illustrated in FIG. 20, etc. to partially overlap thesealing member 50 (see FIG. 20).

Alternatively, the display device 1-3 may be manufactured by completelyremoving the second portion OS1 b (see FIG. 2) of the first supportmember OS1 (see FIG. 2) from the display device 1 (see FIG. 2)illustrated in FIG. 2 and further performing side polishing on a part ofthe sealing member 50 (see FIG. 2). Of the first portion OS1 a (see FIG.2) of the first support member OS1 (see FIG. 2) illustrated in FIG. 2, aportion remaining after the side polishing may become the first supportmember OS1-3 of the display device 1-3.

FIG. 34 is a plan view of a display device 1-4 according to anembodiment. FIG. 35 is a cross-sectional view taken along line X35-X35′of the display device 1-4 of FIG. 34. FIG. 36 is a cross-sectional viewtaken along line X55-X55′ of the display device 1-4 of FIG. 34.

Referring to FIGS. 34 to 36, an embodiment of the display device 1-4includes a display substrate 10-4, a color conversion substrate 30-1, asealing member 51, and a filler 70. The display device 1-4 shown inFIGS. 34 to 36 is substantially the same or similar to the embodimentillustrated in FIGS. 31 to 33 except that the display substrate 10-4further includes a second support member OS2-1. In such an embodiment,the second support member OS2-1 are substantially the same as thosedescribed above with reference to FIGS. 23 to 25. The same or likeelements shown in FIGS. 34 to 36 have been labeled with the samereference characters as used above to describe the embodimentillustrated in FIGS. 31 to 33, and any repetitive detailed descriptionthereof will hereinafter be omitted.

FIG. 37 is a plan view of a display device 1-5 according to anembodiment. FIG. 38 is a cross-sectional view taken along line X36-X36′of the display device 1-5 of FIG. 37. FIG. 39 is a cross-sectional viewtaken along line X56-X56′ of the display device 1-5 of FIG. 37.

Referring to FIGS. 37 to 39, an embodiment of the display device 1-5includes a display substrate 10-5, a color conversion substrate 30-1, asealing member 51, and a filler 70. The display device 1-5 shown inFIGS. 37 to 39 is substantially the same or similar to the embodimentillustrated in FIGS. 34 to 36 except that the display substrate 10-5further includes a third support member OS3-1. In such an embodiment,the third support member OS3-1 are substantially the same as thosedescribed above with reference to FIGS. 27 to 29. The same or likeelements shown in FIGS. 37 to 39 have been labeled with the samereference characters as used above to describe the embodimentillustrated in FIGS. 27 to 29 and 34 to 36, and any repetitive detaileddescription thereof will hereinafter be omitted.

In embodiments of FIGS. 30 to 39 described above, a support memberlocated outside of a sealing member absorbs an impact generated in ascribing process during a manufacturing process, thereby effectivelypreventing cracks from being generated in an inorganic layer, etc.inside a display device.

The invention should not be construed as being limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete and will fully conveythe concept of the invention to those skilled in the art.

While the invention has been particularly shown and described withreference to embodiments thereof, it will be understood by those ofordinary skill in the art that various changes in form and details maybe made therein without departing from the spirit or scope of theinvention as defined by the following claims.

What is claimed is:
 1. A display device comprising: a first base, onwhich a display area and a non-display area are defined; a first supportmember disposed on the first base and located in the non-display area; alight emitting element disposed on the first base and located in thedisplay area; an encapsulation layer disposed on the light emittingelement; a second base disposed on the encapsulation layer; a colorfilter disposed between the second base and the encapsulation layer,wherein the color filter overlaps the light emitting element; awavelength conversion pattern disposed on the color filter; and asealing member disposed between the first base and the second base andlocated in the non-display area, wherein the sealing member is locatedbetween the display area and the first support member and overlaps theencapsulation layer.
 2. The display device of claim 1, wherein theencapsulation layer comprises a lower inorganic layer disposed on thelight emitting element, an organic layer disposed on the lower inorganiclayer and an upper inorganic layer disposed on the organic layer, andthe sealing member is disposed on the upper inorganic layer in thenon-display area and overlaps the lower inorganic layer and the upperinorganic layer.
 3. The display device of claim 2, wherein the sealingmember directly contacts the upper inorganic layer.
 4. The displaydevice of claim 2, further comprising: a dam member disposed on thefirst base and located between the sealing member and the display area,wherein the dam member surrounds the display area, and the lowerinorganic layer and the upper inorganic layer cover the dam member. 5.The display device of claim 4, wherein the first support membercomprises a first lower support pattern disposed on the first base and afirst upper support pattern disposed on the first lower support pattern,and the dam member comprises a lower dam pattern disposed on the firstbase and an upper dam pattern disposed on the lower dam pattern, whereinthe lower support pattern and the lower dam pattern include a samematerial as each other, and the upper support pattern and the upper dampattern include a same material as each other.
 6. The display device ofclaim 5, further comprising: an insulating layer disposed on the firstbase and located between the light emitting element and the first base;and a pixel defining layer disposed on the insulating layer andpartially exposes an anode of the light emitting element, wherein thelower support pattern and the lower dam pattern include a same materialas the insulating layer, and the upper support pattern and the upper dampattern include a same material as the pixel defining layer.
 7. Thedisplay device of claim 2, wherein an end of the lower inorganic layerand an end of the upper inorganic layer are located between the sealingmember and the first support member.
 8. The display device of claim 1,wherein the first support member comprises a first portion spaced apartfrom an edge of the first base and a second portion aligned with theedge of the first base.
 9. The display device of claim 8, wherein awidth of the first portion of the first support member is greater than awidth of the second portion of the first support member.
 10. The displaydevice of claim 9, wherein the second portion of the first supportmember comprises a first side surface aligned with the edges of thefirst base and a second side surface facing the first side surface, andan inclination angle of the first side surface is different from aninclination of the second side surface.
 11. The display device of claim8, further comprising: a connection pad disposed on the first base andlocated in the non-display area, wherein the first portion of the firstsupport member is located between the connection pad and the sealingmember, and the second portion of the first support member extends fromthe first portion of the first support member.
 12. The display device ofclaim 11, further comprising: a second support member disposed on thefirst base, located between the first portion of the first supportmember and the connection pad, and spaced apart from the first supportmember, wherein the second support member extends in a same direction asthe first portion of the first support member.
 13. The display device ofclaim 1, further comprising: a first capping layer located between thecolor filter and the wavelength conversion pattern; and a second cappinglayer located on the wavelength conversion pattern, wherein the firstcapping layer and the second capping layer contact each other in thenon-display area, and the sealing member contacts the second cappinglayer.
 14. The display device of claim 13, further comprising: a bankpattern disposed between the first capping layer and the second cappinglayer, wherein the bank pattern surrounds the wavelength conversionpattern, and the bank pattern is located in the non-display area andoverlaps the sealing member in the non-display area.
 15. The displaydevice of claim 13, further comprising: a color pattern disposed on thesurface of the second base and located in the non-display area, whereinthe color pattern comprises a different colorant from the color filter,the color filter is located in the non-display area, the color patternis disposed between the second base and the color filter, and t hesealing member overlaps the color filter and the color pattern in thenon-display area.
 16. The display device of claim 13, furthercomprising: a filler disposed between the second capping layer and theencapsulation layer, wherein the filler contacts the second cappinglayer, the encapsulation layer and the sealing member.
 17. A displaydevice comprising: a first base on which a display area and anon-display area are defined; a first support member disposed on thefirst base and located in the non-display area; a light emitting elementdisposed on the first base and located in the display area; a secondbase disposed on the light emitting element; a color filter disposedbetween the second base and the light emitting element, wherein thecolor filter overlaps the light emitting element; a wavelengthconversion pattern disposed on the color filter; and a sealing memberdisposed between the first base and the second base and located in thenon-display area, wherein the sealing member comprises a first portionspaced apart from an edge of the first base and a second portion alignedwith the edge of the first base, and wherein the first portion of thesealing member extends in a same direction as the first support member,is located between the first support member and the display area, and isspaced apart from the first support member.
 18. The display device ofclaim 17, wherein a width of the first portion of the sealing member isgreater than a width of the second portion of the sealing member. 19.The display device of claim 17, further comprising: a connection paddisposed on the first base and located in the non-display area, whereinthe first portion of the sealing member is located between theconnection pad and the display area, and the first support member islocated between the connection pad and the first portion of the sealingmember.
 20. The display device of claim 19, further comprising: a secondsupport member disposed on the first base, located between the firstsupport member and the connection pad, and spaced apart from the firstsupport member, wherein the second support member extends in a samedirection as the first support member.
 21. The display device of claim17, further comprising: an encapsulation layer disposed on the lightemitting element, wherein the sealing member overlaps the encapsulationlayer.